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IPP100P03P3L-04

IPP100P03P3L-04

For Reference Only

Part Number IPP100P03P3L-04
PNEDA Part # IPP100P03P3L-04
Description MOSFET P-CH 30V 100A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP100P03P3L-04 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP100P03P3L-04
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP100P03P3L-04, IPP100P03P3L-04 Datasheet (Total Pages: 9, Size: 191.36 KB)
PDFIPP100P03P3L-04 Datasheet Cover
IPP100P03P3L-04 Datasheet Page 2 IPP100P03P3L-04 Datasheet Page 3 IPP100P03P3L-04 Datasheet Page 4 IPP100P03P3L-04 Datasheet Page 5 IPP100P03P3L-04 Datasheet Page 6 IPP100P03P3L-04 Datasheet Page 7 IPP100P03P3L-04 Datasheet Page 8 IPP100P03P3L-04 Datasheet Page 9

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IPP100P03P3L-04 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.1V @ 475µA
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
Vgs (Max)+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds9300pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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