IPP120N06S403AKSA1
For Reference Only
| Part Number | IPP120N06S403AKSA1 |
| PNEDA Part # | IPP120N06S403AKSA1 |
| Description | MOSFET N-CH 60V 120A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,784 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 25 - Mar 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP120N06S403AKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPP120N06S403AKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPP120N06S403AKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 120µA |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13150pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
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Manufacturer STMicroelectronics Series STripFET™ III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 60A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3305pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2Pak-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 11.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 500mOhm @ 2.3A, 13V Vgs(th) (Max) @ Id 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 18.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 433pF @ 100V FET Feature - Power Dissipation (Max) 28W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack |
