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IPP12CN10LGXKSA1

IPP12CN10LGXKSA1

For Reference Only

Part Number IPP12CN10LGXKSA1
PNEDA Part # IPP12CN10LGXKSA1
Description MOSFET N-CH 100V 69A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,044
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP12CN10LGXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP12CN10LGXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPP12CN10LGXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 69A, 10V
Vgs(th) (Max) @ Id2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5600pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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