Transistors

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Records 64,903

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Part Number	Description	In Stock
IPP60R040C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 50A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V Vgs(th) (Max) @ Id: 4V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V FET Feature: - Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock5,940
IPP60R060C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 35A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V FET Feature: - Power Dissipation (Max): 162W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,166
IPP60R060P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 48A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 400V FET Feature: - Power Dissipation (Max): 164W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,582
IPP60R070CFD7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ CFD7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 760µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2721pF @ 400V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,728
IPP60R074C6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 57.7A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 57.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 74mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.4mA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 100V FET Feature: - Power Dissipation (Max): 480.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,100
IPP60R080P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 37A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 400V FET Feature: - Power Dissipation (Max): 129W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,232
IPP60R090CFD7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 570µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2103pF @ 400V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,748
IPP60R099C6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 37.9A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock17,994
IPP60R099C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock11,004
IPP60R099CPAAKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 31A TO-220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V FET Feature: - Power Dissipation (Max): 255W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,526
IPP60R099CPXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 31A TO-220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V FET Feature: - Power Dissipation (Max): 255W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,148
IPP60R099P6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,228
IPP60R099P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 31A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 4V @ 530µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1952pF @ 400V FET Feature: - Power Dissipation (Max): 117W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,716
IPP60R105CFD7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,140
IPP60R120C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 19A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V FET Feature: - Power Dissipation (Max): 92W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,930
IPP60R120P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1544pF @ 400V FET Feature: - Power Dissipation (Max): 95W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock18,216
IPP60R125C6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 100V FET Feature: - Power Dissipation (Max): 219W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,484
IPP60R125CFD7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1503pF @ 400V FET Feature: - Power Dissipation (Max): 92W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock9,000
IPP60R125CPXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 25A TO-220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V FET Feature: - Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,046
IPP60R125P6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V FET Feature: - Power Dissipation (Max): 219W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,402
IPP60R145CFD7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,230
IPP60R160C6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 23.8A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V FET Feature: - Power Dissipation (Max): 176W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock14,016
IPP60R160P6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 100V FET Feature: - Power Dissipation (Max): 176W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,258
IPP60R165CPXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO-220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock18,900
IPP60R170CFD7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ CFD7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1199pF @ 400V FET Feature: - Power Dissipation (Max): 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock14,394
IPP60R180C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V FET Feature: - Power Dissipation (Max): 68W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock9,456
IPP60R180P7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 18A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 4V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V FET Feature: - Power Dissipation (Max): 72W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock21,636
IPP60R190C6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20.2A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V FET Feature: - Power Dissipation (Max): 151W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock32,088
IPP60R190E6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20.2A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V FET Feature: - Power Dissipation (Max): 151W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock2,772
IPP60R190P6XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20.2A TO220 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 630µ Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V FET Feature: - Power Dissipation (Max): 151W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock54,744

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