Transistors

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Records 64,903

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Part Number	Description	In Stock
IPN95R1K2P7ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 6A SOT223 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 478pF @ 400V FET Feature: - Power Dissipation (Max): 7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-3	In Stock27,492
IPN95R2K0P7ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 4A SOT223 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 400V FET Feature: - Power Dissipation (Max): 7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-3	In Stock22,890
IPN95R3K7P7ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 2A SOT223 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 400V FET Feature: - Power Dissipation (Max): 6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-3	In Stock2,952
IPP015N04NGXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 20V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock7,920
IPP020N06NAKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 29A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.8V @ 143µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 30V FET Feature: - Power Dissipation (Max): 3W (Ta), 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock18,732
IPP020N08N5AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 223nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 40V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock15,168
IPP023N04NGXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 90A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 20V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,972
IPP023N08N5AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 208µA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 40V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,228
IPP023N10N5AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 50V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock13,020
IPP023NE7N3G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO220 Manufacturer: Infineon Technologies Series: OptiMOS™ 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 273µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 37.5V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,226
IPP023NE7N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 273µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 37.5V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock12,228
IPP024N06N3GHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,794
IPP024N06N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,182
IPP027N08N5AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 154µA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 40V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,096
IPP028N08N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 40V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock11,760
IPP029N06NAKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 24A TO220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.8V @ 75µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,210
IPP030N10N3GHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock4,230
IPP030N10N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,840
IPP030N10N5AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 184µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 50V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,336
IPP032N06N3GHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 118µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V FET Feature: - Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,670
IPP032N06N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 118µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V FET Feature: - Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock19,272
IPP034N03LGHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A TO-220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock3,348
IPP034N03LGXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A TO-220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock15,828
IPP034N08N5AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6240pF @ 40V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,544
IPP034NE7N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8130pF @ 37.5V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,672
IPP037N06L3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 90A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 2.2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,004
IPP037N08N3GE8181XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock2,250
IPP037N08N3GHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,724
IPP037N08N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,212
IPP039N04LGHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,848

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