IPN95R3K7P7ATMA1
For Reference Only
| Part Number | IPN95R3K7P7ATMA1 |
| PNEDA Part # | IPN95R3K7P7ATMA1 |
| Description | MOSFET N-CH 950V 2A SOT223 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,952 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPN95R3K7P7ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPN95R3K7P7ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPN95R3K7P7ATMA1 Datasheet
- where to find IPN95R3K7P7ATMA1
- Infineon Technologies
- Infineon Technologies IPN95R3K7P7ATMA1
- IPN95R3K7P7ATMA1 PDF Datasheet
- IPN95R3K7P7ATMA1 Stock
- IPN95R3K7P7ATMA1 Pinout
- Datasheet IPN95R3K7P7ATMA1
- IPN95R3K7P7ATMA1 Supplier
- Infineon Technologies Distributor
- IPN95R3K7P7ATMA1 Price
- IPN95R3K7P7ATMA1 Distributor
IPN95R3K7P7ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 950V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 800mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 196pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
| Package / Case | TO-261-3 |
The Products You May Be Interested In
|
Manufacturer Alpha & Omega Semiconductor Inc. Series SDMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 50V FET Feature - Power Dissipation (Max) 2.1W (Ta), 333W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer IXYS Series TrenchMV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 250A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 25V FET Feature - Power Dissipation (Max) 550W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 115mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V FET Feature - Power Dissipation (Max) 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 29A (Ta), 168A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 29A, 10V Vgs(th) (Max) @ Id 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3480pF @ 13V FET Feature - Power Dissipation (Max) 2.1W (Ta), 69W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MX Package / Case DirectFET™ Isometric MX |
Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 163A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 22.5mOhm @ 81.5A, 10V Vgs(th) (Max) @ Id 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs 492nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 22400pF @ 25V FET Feature - Power Dissipation (Max) 1136W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SP6 Package / Case SP6 |
