Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
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Records 64,903

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Part Number	Description	In Stock
IPI90R500C3XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 11A TO-262 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 740µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 100V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock4,032
IPI90R500C3XKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V TO-262 Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,120
IPI90R800C3 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 6.9A TO262-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 460µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,974
IPI90R800C3XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 6.9A TO-262 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 460µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock3,996
IPL60R060CFD7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,438
IPL60R065C7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET HIGH POWER_NEW Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,488
IPL60R065P7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 400V FET Feature: - Power Dissipation (Max): 201W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock2,034
IPL60R075CFD7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ CFD7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 15.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 760µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2721pF @ 400V FET Feature: - Power Dissipation (Max): 189W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock2,394
IPL60R085P7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 400V FET Feature: - Power Dissipation (Max): 154W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock5,652
IPL60R095CFD7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,822
IPL60R104C7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 104mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V FET Feature: - Power Dissipation (Max): 122W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock4,122
IPL60R105P7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 4V @ 530µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1952pF @ 400V FET Feature: - Power Dissipation (Max): 137W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock28,956
IPL60R115CFD7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,190
IPL60R125C7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V FET Feature: - Power Dissipation (Max): 103W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock6,660
IPL60R125P7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1544pF @ 400V FET Feature: - Power Dissipation (Max): 111W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock5,076
IPL60R140CFD7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,902
IPL60R160CFD7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,596
IPL60R180P6AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 100V FET Feature: - Power Dissipation (Max): 176W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock4,572
IPL60R185C7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V FET Feature: - Power Dissipation (Max): 77W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock3,906
IPL60R185CFD7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ CFD7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1199pF @ 400V FET Feature: - Power Dissipation (Max): 85W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock6,858
IPL60R185P7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 19A VSON-4 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 4V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V FET Feature: - Power Dissipation (Max): 81W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock56,532
IPL60R199CPAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 16.4A 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V FET Feature: - Power Dissipation (Max): 139W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock8,082
IPL60R1K5C6SATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8TSON Manufacturer: Infineon Technologies Series: CoolMOS™ C6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V FET Feature: - Power Dissipation (Max): 26.6W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-PAK (5x6) Package / Case: 8-PowerTDFN	In Stock2,898
IPL60R210P6AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V FET Feature: - Power Dissipation (Max): 151W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock8,244
IPL60R255P6AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 255mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 530µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V FET Feature: - Power Dissipation (Max): 126W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock4,770
IPL60R285P7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 761pF @ 400V FET Feature: - Power Dissipation (Max): 59W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock6,588
IPL60R299CPAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 11.1A 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 96W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock3,870
IPL60R2K1C6SATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8TSON Manufacturer: Infineon Technologies Series: CoolMOS™ C6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V FET Feature: - Power Dissipation (Max): 21.6W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-PAK (5x6) Package / Case: 8-PowerTDFN	In Stock3,132
IPL60R360P6SATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8THINPAK Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 370µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 100V FET Feature: - Power Dissipation (Max): 89.3W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-ThinPak (5x6) Package / Case: 8-PowerTDFN	In Stock5,310
IPL60R365P7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 10A VSON-4 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 365mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V FET Feature: - Power Dissipation (Max): 46W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock52,950

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