IPP034N03LGHKSA1
For Reference Only
| Part Number | IPP034N03LGHKSA1 |
| PNEDA Part # | IPP034N03LGHKSA1 |
| Description | MOSFET N-CH 30V 80A TO-220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,348 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP034N03LGHKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPP034N03LGHKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPP034N03LGHKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
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Manufacturer Toshiba Semiconductor and Storage Series π-MOSVII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 470mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 25V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack |
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 208mOhm @ 5A, 18V Vgs(th) (Max) @ Id 5.6V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 42nC @ 18V Vgs (Max) +22V, -4V Input Capacitance (Ciss) (Max) @ Vds 398pF @ 800V FET Feature - Power Dissipation (Max) 103W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247N Package / Case TO-247-3 |
