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IPP028N08N3GXKSA1

IPP028N08N3GXKSA1

For Reference Only

Part Number IPP028N08N3GXKSA1
PNEDA Part # IPP028N08N3GXKSA1
Description MOSFET N-CH 80V 100A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 11,760
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP028N08N3GXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP028N08N3GXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPP028N08N3GXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs206nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14200pF @ 40V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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