IPP034N08N5AKSA1
For Reference Only
| Part Number | IPP034N08N5AKSA1 |
| PNEDA Part # | IPP034N08N5AKSA1 |
| Description | MOSFET N-CH TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,544 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP034N08N5AKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPP034N08N5AKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPP034N08N5AKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 108µA |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6240pF @ 40V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 35A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 18A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 34.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 20V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ATPAK Package / Case ATPAK (2 leads+tab) |
Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 199mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1038pF @ 100V FET Feature - Power Dissipation (Max) 266W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 400mOhm @ 3.75A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 755pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
