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IPN95R1K2P7ATMA1

IPN95R1K2P7ATMA1

For Reference Only

Part Number IPN95R1K2P7ATMA1
PNEDA Part # IPN95R1K2P7ATMA1
Description MOSFET N-CH 950V 6A SOT223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 27,492
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPN95R1K2P7ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPN95R1K2P7ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPN95R1K2P7ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)950V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds478pF @ 400V
FET Feature-
Power Dissipation (Max)7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseTO-261-3

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