Instant Offers

Part Number	Description	In Stock
IXGH24N120C3 IXYS	Transistors - IGBTs - Single IGBT 1200V 48A 250W TO247 Manufacturer: IXYS Series: GenX3™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A Power - Max: 250W Switching Energy: 1.16mJ (on), 470µJ (off) Input Type: Standard Gate Charge: 79nC Td (on/off) @ 25°C: 16ns/93ns Test Condition: 600V, 20A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	In Stock174,026
IXGH100N30C3 IXYS	Transistors - IGBTs - Single IGBT 300V 75A 460W TO247 Manufacturer: IXYS Series: GenX3™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 500A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A Power - Max: 460W Switching Energy: 230µJ (on), 520µJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: 23ns/105ns Test Condition: 200V, 50A, 2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	In Stock239
IXA45IF1200HB IXYS	Transistors - IGBTs - Single IGBT 1200V 78A 325W TO247 Manufacturer: IXYS Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Power - Max: 325W Switching Energy: 3.8mJ (on), 4.1mJ (off) Input Type: Standard Gate Charge: 106nC Td (on/off) @ 25°C: - Test Condition: 600V, 35A, 27Ohm, 15V Reverse Recovery Time (trr): 350ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (HB)	In Stock357
FGH75T65SQDT-F155 ON Semiconductor	Transistors - IGBTs - Single 650V 75A FS4 TRENCH IGBT Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 375W Switching Energy: 300µJ (on), 70µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 23ns/120ns Test Condition: 400V, 18.8A, 4.7Ohm, 15V Reverse Recovery Time (trr): 76ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock7,307
IXGA24N120C3 IXYS	Transistors - IGBTs - Single IGBT 1200V 48A 250W TO263 Manufacturer: IXYS Series: GenX3™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A Power - Max: 250W Switching Energy: 1.16mJ (on), 470µJ (off) Input Type: Standard Gate Charge: 79nC Td (on/off) @ 25°C: 16ns/93ns Test Condition: 600V, 20A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	In Stock298
IXXH30N60C3D1 IXYS	Transistors - IGBTs - Single IGBT 600V 60A 270W TO247 Manufacturer: IXYS Series: GenX3™, XPT™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A Power - Max: 270W Switching Energy: 500µJ (on), 270µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 23ns/77ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXXH)	In Stock4,662
STGW80H65FB STMicroelectronics	Transistors - IGBTs - Single IGBT 650V 120A 469W TO-247 Manufacturer: STMicroelectronics Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Power - Max: 469W Switching Energy: 2.1mJ (on), 1.5mJ (off) Input Type: Standard Gate Charge: 414nC Td (on/off) @ 25°C: 84ns/280ns Test Condition: 400V, 80A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock33
STGW15M120DF3 STMicroelectronics	Transistors - IGBTs - Single IGBT 1200V 30A 259W Manufacturer: STMicroelectronics Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Power - Max: 259W Switching Energy: 550µJ (on), 850µJ (off) Input Type: Standard Gate Charge: 226nC Td (on/off) @ 25°C: 26ns/122ns Test Condition: 600V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): 270ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock190
RJH60F0DPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 50A 201.6W TO-3P Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A Power - Max: 201.6W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 46ns/70ns Test Condition: 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock1,526
AOK60B65M3 Alpha & Omega Semiconductor	Transistors - IGBTs - Single IGBT 650V 60A TO247 Manufacturer: Alpha & Omega Semiconductor Inc. Series: Alpha IGBT™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A Power - Max: 500W Switching Energy: 2.6mJ (on), 1.3mJ (off) Input Type: Standard Gate Charge: 106nC Td (on/off) @ 25°C: 44ns/166ns Test Condition: 400V, 60A, 5Ohm, 15V Reverse Recovery Time (trr): 346ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,491
NGTB50N65FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 50A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 417W Switching Energy: 1.5mJ (on), 460µJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 100ns/237ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 94ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock1,024
AOK60B65H1 Alpha & Omega Semiconductor	Transistors - IGBTs - Single IGBT 650V 60A TO-247 Manufacturer: Alpha & Omega Semiconductor Inc. Series: Alpha IGBT™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A Power - Max: 500W Switching Energy: 2.42mJ (on), 1.17mJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 39ns/153ns Test Condition: 400V, 60A, 5Ohm, 15V Reverse Recovery Time (trr): 288ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,117
IXGP30N60C3 IXYS	Transistors - IGBTs - Single IGBT 600V 60A 220W TO220AB Manufacturer: IXYS Series: GenX3™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 220W Switching Energy: 270µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 38nC Td (on/off) @ 25°C: 16ns/42ns Test Condition: 300V, 20A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock2,217
NGTB50N60L2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 50A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Power - Max: 500W Switching Energy: 800µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 110ns/270ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 67ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock428
SGP23N60UFDTU ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 23A 100W TO220 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A Power - Max: 100W Switching Energy: 115µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 49nC Td (on/off) @ 25°C: 17ns/60ns Test Condition: 300V, 12A, 23Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock445
SGD02N120BUMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 6.2A 62W TO252-3 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 6.2A Current - Collector Pulsed (Icm): 9.6A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A Power - Max: 62W Switching Energy: 220µJ Input Type: Standard Gate Charge: 11nC Td (on/off) @ 25°C: 23ns/260ns Test Condition: 800V, 2A, 91Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	In Stock6,002
AUIRGPS4070D0 Infineon Technologies	Transistors - IGBTs - Single IGBT 700V SUPER PG-TO274-3-903 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A Power - Max: 750W Switching Energy: 5.7mJ (on), 4.2mJ (off) Input Type: Standard Gate Charge: 250nC Td (on/off) @ 25°C: 40ns/140ns Test Condition: 400V, 120A, 4.7Ohm, 15V Reverse Recovery Time (trr): 210ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: PG-TO274-3-903	In Stock1,956
STGW25H120F2 STMicroelectronics	Transistors - IGBTs - Single IGBT H-SERIES 1200V 25A TO-247 Manufacturer: STMicroelectronics Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A Power - Max: 375W Switching Energy: 600µJ (on), 700µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 29ns/130ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock146
STGW60H60DLFB STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 80A 375W TO-247 Manufacturer: STMicroelectronics Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Power - Max: 375W Switching Energy: 626µJ (off) Input Type: Standard Gate Charge: 306nC Td (on/off) @ 25°C: -/160ns Test Condition: 400V, 60A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock203
IXBH40N160 IXYS	Transistors - IGBTs - Single IGBT 1600V 33A 350W TO247AD Manufacturer: IXYS Series: BIMOSFET™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1600V Current - Collector (Ic) (Max): 33A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 7.1V @ 15V, 20A Power - Max: 350W Switching Energy: - Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: - Test Condition: 960V, 20A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	In Stock1,011
APT35GP120BG Microsemi	Transistors - IGBTs - Single IGBT 1200V 96A 543W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A Power - Max: 543W Switching Energy: 750µJ (on), 680µJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: 16ns/94ns Test Condition: 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock403
IXGH40N120C3 IXYS	Transistors - IGBTs - Single IGBT 1200V 75A 380W TO247 Manufacturer: IXYS Series: GenX3™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A Power - Max: 380W Switching Energy: 1.8mJ (on), 550µJ (off) Input Type: Standard Gate Charge: 142nC Td (on/off) @ 25°C: 17ns/130ns Test Condition: 600V, 30A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	In Stock81,214
IXGF25N250 IXYS	Transistors - IGBTs - Single IGBT 2500V 30A 114W I4-PAK Manufacturer: IXYS Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A Power - Max: 114W Switching Energy: - Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac™-5 (3 Leads) Supplier Device Package: ISOPLUS i4-PAC™	In Stock746
APT100GN120B2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 245A 960W TMAX Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 245A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Power - Max: 960W Switching Energy: 11mJ (on), 9.5mJ (off) Input Type: Standard Gate Charge: 540nC Td (on/off) @ 25°C: 50ns/615ns Test Condition: 800V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock22
APT45GP120BG Microsemi	Transistors - IGBTs - Single IGBT 1200V 100A 625W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 170A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A Power - Max: 625W Switching Energy: 900µJ (on), 904µJ (off) Input Type: Standard Gate Charge: 185nC Td (on/off) @ 25°C: 18ns/102ns Test Condition: 600V, 45A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock462
IXGH50N90B2D1 IXYS	Transistors - IGBTs - Single IGBT 900V 75A 400W TO247AD Manufacturer: IXYS Series: HiPerFAST™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Power - Max: 400W Switching Energy: 4.7mJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/350ns Test Condition: 720V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	In Stock19,049
HGTG12N60C3D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 24A 104W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 104W Switching Energy: 380µJ (on), 900µJ (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 42ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock16,686
APT25GP120BDQ1G Microsemi	Transistors - IGBTs - Single IGBT 1200V 69A 417W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 69A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Power - Max: 417W Switching Energy: 500µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 12ns/70ns Test Condition: 600V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock493
IXBH20N360HV IXYS	Transistors - IGBTs - Single IGBT 3600V 70A TO-247HV Manufacturer: IXYS Series: BIMOSFET™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Power - Max: 430W Switching Energy: 15.5mJ (on), 4.3mJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 18ns/238ns Test Condition: 1500V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 1.7µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: TO-247HV	In Stock111
APT75GN60LDQ3G Microsemi	Transistors - IGBTs - Single IGBT 600V 155A 536W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 155A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A Power - Max: 536W Switching Energy: 2500µJ (on), 2140µJ (off) Input Type: Standard Gate Charge: 485nC Td (on/off) @ 25°C: 47ns/385ns Test Condition: 400V, 75A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock7,277

IXGH24N120C3

IXYS

Transistors - IGBTs - Single

IGBT 1200V 48A 250W TO247

Manufacturer: IXYS
Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 96A
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Power - Max: 250W
Switching Energy: 1.16mJ (on), 470µJ (off)
Input Type: Standard
Gate Charge: 79nC
Td (on/off) @ 25°C: 16ns/93ns
Test Condition: 600V, 20A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

In Stock174,026

IXGH100N30C3

IXYS

Transistors - IGBTs - Single

IGBT 300V 75A 460W TO247

Manufacturer: IXYS
Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 500A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Power - Max: 460W
Switching Energy: 230µJ (on), 520µJ (off)
Input Type: Standard
Gate Charge: 162nC
Td (on/off) @ 25°C: 23ns/105ns
Test Condition: 200V, 50A, 2Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

In Stock239

IXA45IF1200HB

IXYS

Transistors - IGBTs - Single

IGBT 1200V 78A 325W TO247

Manufacturer: IXYS
Series: -
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Power - Max: 325W
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Input Type: Standard
Gate Charge: 106nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 35A, 27Ohm, 15V
Reverse Recovery Time (trr): 350ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (HB)

In Stock357

FGH75T65SQDT-F155

ON Semiconductor

Transistors - IGBTs - Single

650V 75A FS4 TRENCH IGBT

Manufacturer: ON Semiconductor
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 150A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 375W
Switching Energy: 300µJ (on), 70µJ (off)
Input Type: Standard
Gate Charge: 128nC
Td (on/off) @ 25°C: 23ns/120ns
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 76ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock7,307

IXGA24N120C3

IXYS

Transistors - IGBTs - Single

IGBT 1200V 48A 250W TO263

Manufacturer: IXYS
Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 96A
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Power - Max: 250W
Switching Energy: 1.16mJ (on), 470µJ (off)
Input Type: Standard
Gate Charge: 79nC
Td (on/off) @ 25°C: 16ns/93ns
Test Condition: 600V, 20A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXGA)

In Stock298

IXXH30N60C3D1

IXYS

Transistors - IGBTs - Single

IGBT 600V 60A 270W TO247

Manufacturer: IXYS
Series: GenX3™, XPT™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 110A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Power - Max: 270W
Switching Energy: 500µJ (on), 270µJ (off)
Input Type: Standard
Gate Charge: 37nC
Td (on/off) @ 25°C: 23ns/77ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXXH)

In Stock4,662

STGW80H65FB

STMicroelectronics

Transistors - IGBTs - Single

IGBT 650V 120A 469W TO-247

Manufacturer: STMicroelectronics
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Power - Max: 469W
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 414nC
Td (on/off) @ 25°C: 84ns/280ns
Test Condition: 400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock33

STGW15M120DF3

STMicroelectronics

Transistors - IGBTs - Single

IGBT 1200V 30A 259W

Manufacturer: STMicroelectronics
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Power - Max: 259W
Switching Energy: 550µJ (on), 850µJ (off)
Input Type: Standard
Gate Charge: 226nC
Td (on/off) @ 25°C: 26ns/122ns
Test Condition: 600V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr): 270ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock190

RJH60F0DPK-00#T0

Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 50A 201.6W TO-3P

Manufacturer: Renesas Electronics America
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A
Power - Max: 201.6W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 46ns/70ns
Test Condition: 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr): 140ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

In Stock1,526

AOK60B65M3

Alpha & Omega Semiconductor

Transistors - IGBTs - Single

IGBT 650V 60A TO247

Manufacturer: Alpha & Omega Semiconductor Inc.
Series: Alpha IGBT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A
Power - Max: 500W
Switching Energy: 2.6mJ (on), 1.3mJ (off)
Input Type: Standard
Gate Charge: 106nC
Td (on/off) @ 25°C: 44ns/166ns
Test Condition: 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr): 346ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock3,491

NGTB50N65FL2WG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 50A TO247

Manufacturer: ON Semiconductor
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 417W
Switching Energy: 1.5mJ (on), 460µJ (off)
Input Type: Standard
Gate Charge: 220nC
Td (on/off) @ 25°C: 100ns/237ns
Test Condition: 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 94ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock1,024

AOK60B65H1

Alpha & Omega Semiconductor

Transistors - IGBTs - Single

IGBT 650V 60A TO-247

Manufacturer: Alpha & Omega Semiconductor Inc.
Series: Alpha IGBT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
Power - Max: 500W
Switching Energy: 2.42mJ (on), 1.17mJ (off)
Input Type: Standard
Gate Charge: 90nC
Td (on/off) @ 25°C: 39ns/153ns
Test Condition: 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr): 288ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock4,117

IXGP30N60C3

IXYS

Transistors - IGBTs - Single

IGBT 600V 60A 220W TO220AB

Manufacturer: IXYS
Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Power - Max: 220W
Switching Energy: 270µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 38nC
Td (on/off) @ 25°C: 16ns/42ns
Test Condition: 300V, 20A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

In Stock2,217

NGTB50N60L2WG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 50A TO247

Manufacturer: ON Semiconductor
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Power - Max: 500W
Switching Energy: 800µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 110ns/270ns
Test Condition: 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 67ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock428

SGP23N60UFDTU

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 23A 100W TO220

Manufacturer: ON Semiconductor
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
Power - Max: 100W
Switching Energy: 115µJ (on), 135µJ (off)
Input Type: Standard
Gate Charge: 49nC
Td (on/off) @ 25°C: 17ns/60ns
Test Condition: 300V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

In Stock445

SGD02N120BUMA1

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 6.2A 62W TO252-3

Manufacturer: Infineon Technologies
Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 6.2A
Current - Collector Pulsed (Icm): 9.6A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
Power - Max: 62W
Switching Energy: 220µJ
Input Type: Standard
Gate Charge: 11nC
Td (on/off) @ 25°C: 23ns/260ns
Test Condition: 800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

In Stock6,002

AUIRGPS4070D0

Infineon Technologies

Transistors - IGBTs - Single

IGBT 700V SUPER PG-TO274-3-903

Manufacturer: Infineon Technologies
Series: Automotive, AEC-Q101
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 240A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Power - Max: 750W
Switching Energy: 5.7mJ (on), 4.2mJ (off)
Input Type: Standard
Gate Charge: 250nC
Td (on/off) @ 25°C: 40ns/140ns
Test Condition: 400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 210ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Supplier Device Package: PG-TO274-3-903

In Stock1,956

STGW25H120F2

STMicroelectronics

Transistors - IGBTs - Single

IGBT H-SERIES 1200V 25A TO-247

Manufacturer: STMicroelectronics
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Power - Max: 375W
Switching Energy: 600µJ (on), 700µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 29ns/130ns
Test Condition: 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock146

STGW60H60DLFB

STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 80A 375W TO-247

Manufacturer: STMicroelectronics
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Power - Max: 375W
Switching Energy: 626µJ (off)
Input Type: Standard
Gate Charge: 306nC
Td (on/off) @ 25°C: -/160ns
Test Condition: 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock203

IXBH40N160

IXYS

Transistors - IGBTs - Single

IGBT 1600V 33A 350W TO247AD

Manufacturer: IXYS
Series: BIMOSFET™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1600V
Current - Collector (Ic) (Max): 33A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 7.1V @ 15V, 20A
Power - Max: 350W
Switching Energy: -
Input Type: Standard
Gate Charge: 130nC
Td (on/off) @ 25°C: -
Test Condition: 960V, 20A, 22Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)

In Stock1,011

APT35GP120BG

Microsemi

Transistors - IGBTs - Single

IGBT 1200V 96A 543W TO247

Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 96A
Current - Collector Pulsed (Icm): 140A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Power - Max: 543W
Switching Energy: 750µJ (on), 680µJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: 16ns/94ns
Test Condition: 600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

In Stock403

IXGH40N120C3

IXYS

Transistors - IGBTs - Single

IGBT 1200V 75A 380W TO247

Manufacturer: IXYS
Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Power - Max: 380W
Switching Energy: 1.8mJ (on), 550µJ (off)
Input Type: Standard
Gate Charge: 142nC
Td (on/off) @ 25°C: 17ns/130ns
Test Condition: 600V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

In Stock81,214

IXGF25N250

IXYS

Transistors - IGBTs - Single

IGBT 2500V 30A 114W I4-PAK

Manufacturer: IXYS
Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Power - Max: 114W
Switching Energy: -
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5 (3 Leads)
Supplier Device Package: ISOPLUS i4-PAC™

In Stock746

APT100GN120B2G

Microsemi

Transistors - IGBTs - Single

IGBT 1200V 245A 960W TMAX

Manufacturer: Microsemi Corporation
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 245A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Power - Max: 960W
Switching Energy: 11mJ (on), 9.5mJ (off)
Input Type: Standard
Gate Charge: 540nC
Td (on/off) @ 25°C: 50ns/615ns
Test Condition: 800V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

In Stock22

APT45GP120BG

Microsemi

Transistors - IGBTs - Single

IGBT 1200V 100A 625W TO247

Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 170A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Power - Max: 625W
Switching Energy: 900µJ (on), 904µJ (off)
Input Type: Standard
Gate Charge: 185nC
Td (on/off) @ 25°C: 18ns/102ns
Test Condition: 600V, 45A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

In Stock462

IXGH50N90B2D1

IXYS

Transistors - IGBTs - Single

IGBT 900V 75A 400W TO247AD

Manufacturer: IXYS
Series: HiPerFAST™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Power - Max: 400W
Switching Energy: 4.7mJ (off)
Input Type: Standard
Gate Charge: 135nC
Td (on/off) @ 25°C: 20ns/350ns
Test Condition: 720V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

In Stock19,049

HGTG12N60C3D

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 24A 104W TO247

Manufacturer: ON Semiconductor
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 96A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 104W
Switching Energy: 380µJ (on), 900µJ (off)
Input Type: Standard
Gate Charge: 48nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 42ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock16,686

APT25GP120BDQ1G

Microsemi

Transistors - IGBTs - Single

IGBT 1200V 69A 417W TO247

Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 69A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Power - Max: 417W
Switching Energy: 500µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 110nC
Td (on/off) @ 25°C: 12ns/70ns
Test Condition: 600V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

In Stock493

IXBH20N360HV

IXYS

Transistors - IGBTs - Single

IGBT 3600V 70A TO-247HV

Manufacturer: IXYS
Series: BIMOSFET™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 220A
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Power - Max: 430W
Switching Energy: 15.5mJ (on), 4.3mJ (off)
Input Type: Standard
Gate Charge: 110nC
Td (on/off) @ 25°C: 18ns/238ns
Test Condition: 1500V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 1.7µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: TO-247HV

In Stock111

APT75GN60LDQ3G

Microsemi

Transistors - IGBTs - Single

IGBT 600V 155A 536W TO264

Manufacturer: Microsemi Corporation
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 155A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Power - Max: 536W
Switching Energy: 2500µJ (on), 2140µJ (off)
Input Type: Standard
Gate Charge: 485nC
Td (on/off) @ 25°C: 47ns/385ns
Test Condition: 400V, 75A, 1Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]

In Stock7,277

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