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APT100GN120B2G

APT100GN120B2G

For Reference Only

Part Number APT100GN120B2G
PNEDA Part # APT100GN120B2G
Description IGBT 1200V 245A 960W TMAX
Manufacturer Microsemi
Unit Price
1 ---------- $107.3513
50 ---------- $102.3192
100 ---------- $97.2871
200 ---------- $92.2550
400 ---------- $88.0616
500 ---------- $83.8682
In Stock 22
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT100GN120B2G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT100GN120B2G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT100GN120B2G Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)245A
Current - Collector Pulsed (Icm)300A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 100A
Power - Max960W
Switching Energy11mJ (on), 9.5mJ (off)
Input TypeStandard
Gate Charge540nC
Td (on/off) @ 25°C50ns/615ns
Test Condition800V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

180W

Switching Energy

2.85mJ (on), 6.47mJ (off)

Input Type

Standard

Gate Charge

50nC

Td (on/off) @ 25°C

16ns/290ns

Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

32A

Current - Collector Pulsed (Icm)

36A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 12A

Power - Max

140W

Switching Energy

185µJ (on), 355µJ (off)

Input Type

Standard

Gate Charge

25nC

Td (on/off) @ 25°C

31ns/83ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220 Full Pack

STGWT80V60F

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 80A

Power - Max

469W

Switching Energy

1.8mJ (on), 1mJ (off)

Input Type

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Gate Charge

448nC

Td (on/off) @ 25°C

60ns/220ns

Test Condition

400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 28A

Power - Max

150W

Switching Energy

2mJ (off)

Input Type

Standard

Gate Charge

68nC

Td (on/off) @ 25°C

15ns/175ns

Test Condition

480V, 28A, 10Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IXSH24N60

IXYS

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

48A

Current - Collector Pulsed (Icm)

96A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 24A

Power - Max

150W

Switching Energy

2mJ (off)

Input Type

Standard

Gate Charge

75nC

Td (on/off) @ 25°C

100ns/450ns

Test Condition

480V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

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