Instant Offers

Part Number	Description	In Stock
FGH50T65UPD ON Semiconductor	Transistors - IGBTs - Single IGBT 650V 100A 340W TO-247AB Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Power - Max: 340W Switching Energy: 2.7mJ (on), 740µJ (off) Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 32ns/160ns Test Condition: 400V, 50A, 6Ohm, 15V Reverse Recovery Time (trr): 53ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock4,081
FGA50N100BNTDTU ON Semiconductor	Transistors - IGBTs - Single IGBT 1000V 50A 156W TO3P Manufacturer: ON Semiconductor Series: - IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Power - Max: 156W Switching Energy: - Input Type: Standard Gate Charge: 275nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.5µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock1,240
AIKW20N60CTXKSA1 Infineon Technologies	Transistors - IGBTs - Single IC DISCRETE 600V TO247-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, TrenchStop™ IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Power - Max: 166W Switching Energy: 310µJ (on), 460µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 18ns/199ns Test Condition: 400V, 20A, 12Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-41	In Stock1,676
APT65GP60B2G Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 833W TMAX Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 250A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A Power - Max: 833W Switching Energy: 605µJ (on), 896µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 30ns/91ns Test Condition: 400V, 65A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock250
APT75GN120LG Microsemi	Transistors - IGBTs - Single IGBT 1200V 200A 833W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 833W Switching Energy: 8620µJ (on), 11400µJ (off) Input Type: Standard Gate Charge: 425nC Td (on/off) @ 25°C: 60ns/620ns Test Condition: 800V, 75A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock97
FGL35N120FTDTU ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 70A 368W TO264 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A Power - Max: 368W Switching Energy: 2.5mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 34ns/172ns Test Condition: 600V, 35A, 10Ohm, 15V Reverse Recovery Time (trr): 337ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264-3	In Stock461
IRG4PH50KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 200W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 24A Power - Max: 200W Switching Energy: 3.83mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: 87ns/140ns Test Condition: 800V, 24A, 5Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock90
IRG7PH35UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 180W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 180W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 105ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock1,715
STGW80V60DF STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 120A 469W TO247 Manufacturer: STMicroelectronics Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A Power - Max: 469W Switching Energy: 1.8mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 448nC Td (on/off) @ 25°C: 60ns/220ns Test Condition: 400V, 80A, 5Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Exposed Pad Supplier Device Package: TO-247	In Stock146
IRGP4640DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 65A 250W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Power - Max: 250W Switching Energy: 115µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 41ns/104ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock5,914
STGW40V60DLF STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 80A 283W TO247 Manufacturer: STMicroelectronics Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 283W Switching Energy: 411µJ (off) Input Type: Standard Gate Charge: 226nC Td (on/off) @ 25°C: -/208ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock367
IXGH36N60B3C1 IXYS	Transistors - IGBTs - Single IGBT 600V 75A 250W TO247 Manufacturer: IXYS Series: GenX3™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 250W Switching Energy: 390µJ (on), 800µJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 20ns/125ns Test Condition: 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	In Stock38,621
IRGPS46160DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 240A 750W SUPER247 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A Power - Max: 750W Switching Energy: 5.75mJ (on), 3.43mJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 80ns/190ns Test Condition: 400V, 120A, 4.7Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock77
STGY50NC60WD STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 110A 278W MAX247 Manufacturer: STMicroelectronics Series: PowerMESH™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 110A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Power - Max: 278W Switching Energy: 365µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 195nC Td (on/off) @ 25°C: 52ns/240ns Test Condition: 390V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 55ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: MAX247™	In Stock3,780
APT33GF120BRG Microsemi	Transistors - IGBTs - Single IGBT 1200V 52A 297W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 52A Current - Collector Pulsed (Icm): 104A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Power - Max: 297W Switching Energy: 2.8mJ (on), 2.8mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 25ns/210ns Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock819
IXYH40N120B3D1 IXYS	Transistors - IGBTs - Single IGBT 1200V 86A 480W TO247 Manufacturer: IXYS Series: GenX3™, XPT™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 86A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Power - Max: 480W Switching Energy: 2.7mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 87nC Td (on/off) @ 25°C: 22ns/177ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXYH)	In Stock276
IRG4PC50KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 52A 200W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 52A Current - Collector Pulsed (Icm): 104A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 200W Switching Energy: 1.61mJ (on), 840µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 63ns/150ns Test Condition: 480V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock7,176
IXXH80N65B4H1 IXYS	Transistors - IGBTs - Single IGBT 650V 160A 625W TO247AD Manufacturer: IXYS Series: GenX4™, XPT™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 430A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Power - Max: 625W Switching Energy: 3.77mJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 38ns/120ns Test Condition: 400V, 80A, 3Ohm, 15V Reverse Recovery Time (trr): 150ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXXH)	In Stock5,499
NGTB40N120FL3WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 160A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 454W Switching Energy: 1.6mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 212nC Td (on/off) @ 25°C: 18ns/145ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 136ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock35,239
STGW30NC60KD STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 60A 200W TO247 Manufacturer: STMicroelectronics Series: PowerMESH™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 125A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Power - Max: 200W Switching Energy: 350µJ (on), 435µJ (off) Input Type: Standard Gate Charge: 96nC Td (on/off) @ 25°C: 29ns/120ns Test Condition: 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock793
STGW35NB60SD STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 70A 200W TO247 Manufacturer: STMicroelectronics Series: PowerMESH™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 250A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Power - Max: 200W Switching Energy: 840µJ (on), 7.4mJ (off) Input Type: Standard Gate Charge: 83nC Td (on/off) @ 25°C: 92ns/1.1µs Test Condition: 480V, 20A, 100Ohm, 15V Reverse Recovery Time (trr): 44ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock7
FGH30S130P ON Semiconductor	Transistors - IGBTs - Single IGBT 1300V 60A 500W TO-247AB Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1300V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Power - Max: 500W Switching Energy: - Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock218
IKW50N65F5FKSA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 650V 80A 305W PG-TO247-3 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 305W Switching Energy: 490µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 21ns/175ns Test Condition: 400V, 25A, 12Ohm, 15V Reverse Recovery Time (trr): 52ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	In Stock320
IRG4BH20K-SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 11A 60W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Power - Max: 60W Switching Energy: 450µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 23ns/93ns Test Condition: 960V, 5A, 50Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock1,925
IGB50N60TATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 100A 333W TO263-3 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 333W Switching Energy: 2.6mJ Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 26ns/299ns Test Condition: 400V, 50A, 7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	In Stock2,872
IXBH16N170 IXYS	Transistors - IGBTs - Single IGBT 1700V 40A 250W TO247AD Manufacturer: IXYS Series: BIMOSFET™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A Power - Max: 250W Switching Energy: - Input Type: Standard Gate Charge: 72nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.32µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	In Stock272
IRG4PC60FPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 90A 520W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A Power - Max: 520W Switching Energy: 300µJ (on), 4.6mJ (off) Input Type: Standard Gate Charge: 290nC Td (on/off) @ 25°C: 42ns/310ns Test Condition: 480V, 60A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock445
IRG4PH50UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 200W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 24A Power - Max: 200W Switching Energy: 2.1mJ (on), 1.5mJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 47ns/110ns Test Condition: 800V, 24A, 5Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Request a Quote
IKW75N60TFKSA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 80A 428W TO247-3 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 428W Switching Energy: 4.5mJ Input Type: Standard Gate Charge: 470nC Td (on/off) @ 25°C: 33ns/330ns Test Condition: 400V, 75A, 5Ohm, 15V Reverse Recovery Time (trr): 121ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	In Stock4,162
AIKW50N60CTXKSA1 Infineon Technologies	Transistors - IGBTs - Single IC DISCRETE 600V TO247-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, TrenchStop™ IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 333W Switching Energy: 1.2mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 26ns/299ns Test Condition: 400V, 50A, 7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-41	In Stock6,701

FGH50T65UPD

ON Semiconductor

Transistors - IGBTs - Single

IGBT 650V 100A 340W TO-247AB

Manufacturer: ON Semiconductor
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Power - Max: 340W
Switching Energy: 2.7mJ (on), 740µJ (off)
Input Type: Standard
Gate Charge: 230nC
Td (on/off) @ 25°C: 32ns/160ns
Test Condition: 400V, 50A, 6Ohm, 15V
Reverse Recovery Time (trr): 53ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock4,081

FGA50N100BNTDTU

ON Semiconductor

Transistors - IGBTs - Single

IGBT 1000V 50A 156W TO3P

Manufacturer: ON Semiconductor
Series: -
IGBT Type: NPT and Trench
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Power - Max: 156W
Switching Energy: -
Input Type: Standard
Gate Charge: 275nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.5µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

In Stock1,240

AIKW20N60CTXKSA1

Infineon Technologies

Transistors - IGBTs - Single

IC DISCRETE 600V TO247-3

Manufacturer: Infineon Technologies
Series: Automotive, AEC-Q101, TrenchStop™
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Power - Max: 166W
Switching Energy: 310µJ (on), 460µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 18ns/199ns
Test Condition: 400V, 20A, 12Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-41

In Stock1,676

APT65GP60B2G

Microsemi

Transistors - IGBTs - Single

IGBT 600V 100A 833W TMAX

Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 250A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Power - Max: 833W
Switching Energy: 605µJ (on), 896µJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 30ns/91ns
Test Condition: 400V, 65A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

In Stock250

APT75GN120LG

Microsemi

Transistors - IGBTs - Single

IGBT 1200V 200A 833W TO264

Manufacturer: Microsemi Corporation
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 833W
Switching Energy: 8620µJ (on), 11400µJ (off)
Input Type: Standard
Gate Charge: 425nC
Td (on/off) @ 25°C: 60ns/620ns
Test Condition: 800V, 75A, 1Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]

In Stock97

FGL35N120FTDTU

ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 70A 368W TO264

Manufacturer: ON Semiconductor
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Power - Max: 368W
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 34ns/172ns
Test Condition: 600V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr): 337ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264-3

In Stock461

IRG4PH50KDPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 45A 200W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 24A
Power - Max: 200W
Switching Energy: 3.83mJ (on), 1.9mJ (off)
Input Type: Standard
Gate Charge: 180nC
Td (on/off) @ 25°C: 87ns/140ns
Test Condition: 800V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock90

IRG7PH35UDPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 50A 180W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Power - Max: 180W
Switching Energy: 1.06mJ (on), 620µJ (off)
Input Type: Standard
Gate Charge: 85nC
Td (on/off) @ 25°C: 30ns/160ns
Test Condition: 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 105ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock1,715

STGW80V60DF

STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 120A 469W TO247

Manufacturer: STMicroelectronics
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Power - Max: 469W
Switching Energy: 1.8mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 448nC
Td (on/off) @ 25°C: 60ns/220ns
Test Condition: 400V, 80A, 5Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Exposed Pad
Supplier Device Package: TO-247

In Stock146

IRGP4640DPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 65A 250W TO247AD

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Power - Max: 250W
Switching Energy: 115µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 41ns/104ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 89ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

In Stock5,914

STGW40V60DLF

STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 80A 283W TO247

Manufacturer: STMicroelectronics
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 283W
Switching Energy: 411µJ (off)
Input Type: Standard
Gate Charge: 226nC
Td (on/off) @ 25°C: -/208ns
Test Condition: 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock367

IXGH36N60B3C1

IXYS

Transistors - IGBTs - Single

IGBT 600V 75A 250W TO247

Manufacturer: IXYS
Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Power - Max: 250W
Switching Energy: 390µJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 20ns/125ns
Test Condition: 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

In Stock38,621

IRGPS46160DPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 240A 750W SUPER247

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 240A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
Power - Max: 750W
Switching Energy: 5.75mJ (on), 3.43mJ (off)
Input Type: Standard
Gate Charge: 240nC
Td (on/off) @ 25°C: 80ns/190ns
Test Condition: 400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 130ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: SUPER-247™ (TO-274AA)

In Stock77

STGY50NC60WD

STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 110A 278W MAX247

Manufacturer: STMicroelectronics
Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 110A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Power - Max: 278W
Switching Energy: 365µJ (on), 560µJ (off)
Input Type: Standard
Gate Charge: 195nC
Td (on/off) @ 25°C: 52ns/240ns
Test Condition: 390V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): 55ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: MAX247™

In Stock3,780

APT33GF120BRG

Microsemi

Transistors - IGBTs - Single

IGBT 1200V 52A 297W TO247

Manufacturer: Microsemi Corporation
Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 52A
Current - Collector Pulsed (Icm): 104A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Power - Max: 297W
Switching Energy: 2.8mJ (on), 2.8mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 25ns/210ns
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

In Stock819

IXYH40N120B3D1

IXYS

Transistors - IGBTs - Single

IGBT 1200V 86A 480W TO247

Manufacturer: IXYS
Series: GenX3™, XPT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 86A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Power - Max: 480W
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Input Type: Standard
Gate Charge: 87nC
Td (on/off) @ 25°C: 22ns/177ns
Test Condition: 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXYH)

In Stock276

IRG4PC50KDPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 52A 200W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 52A
Current - Collector Pulsed (Icm): 104A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Power - Max: 200W
Switching Energy: 1.61mJ (on), 840µJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 63ns/150ns
Test Condition: 480V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock7,176

IXXH80N65B4H1

IXYS

Transistors - IGBTs - Single

IGBT 650V 160A 625W TO247AD

Manufacturer: IXYS
Series: GenX4™, XPT™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): 430A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Power - Max: 625W
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 38ns/120ns
Test Condition: 400V, 80A, 3Ohm, 15V
Reverse Recovery Time (trr): 150ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXXH)

In Stock5,499

NGTB40N120FL3WG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 160A TO247

Manufacturer: ON Semiconductor
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 454W
Switching Energy: 1.6mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 212nC
Td (on/off) @ 25°C: 18ns/145ns
Test Condition: 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): 136ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock35,239

STGW30NC60KD

STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 60A 200W TO247

Manufacturer: STMicroelectronics
Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 125A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Power - Max: 200W
Switching Energy: 350µJ (on), 435µJ (off)
Input Type: Standard
Gate Charge: 96nC
Td (on/off) @ 25°C: 29ns/120ns
Test Condition: 480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock793

STGW35NB60SD

STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 70A 200W TO247

Manufacturer: STMicroelectronics
Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 250A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Power - Max: 200W
Switching Energy: 840µJ (on), 7.4mJ (off)
Input Type: Standard
Gate Charge: 83nC
Td (on/off) @ 25°C: 92ns/1.1µs
Test Condition: 480V, 20A, 100Ohm, 15V
Reverse Recovery Time (trr): 44ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock7

FGH30S130P

ON Semiconductor

Transistors - IGBTs - Single

IGBT 1300V 60A 500W TO-247AB

Manufacturer: ON Semiconductor
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1300V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Power - Max: 500W
Switching Energy: -
Input Type: Standard
Gate Charge: 78nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock218

IKW50N65F5FKSA1

Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V 80A 305W PG-TO247-3

Manufacturer: Infineon Technologies
Series: TrenchStop®
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Power - Max: 305W
Switching Energy: 490µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 21ns/175ns
Test Condition: 400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr): 52ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

In Stock320

IRG4BH20K-SPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 11A 60W D2PAK

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 11A
Current - Collector Pulsed (Icm): 22A
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Power - Max: 60W
Switching Energy: 450µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 28nC
Td (on/off) @ 25°C: 23ns/93ns
Test Condition: 960V, 5A, 50Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

In Stock1,925

IGB50N60TATMA1

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 100A 333W TO263-3

Manufacturer: Infineon Technologies
Series: TrenchStop®
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 333W
Switching Energy: 2.6mJ
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 26ns/299ns
Test Condition: 400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2

In Stock2,872

IXBH16N170

IXYS

Transistors - IGBTs - Single

IGBT 1700V 40A 250W TO247AD

Manufacturer: IXYS
Series: BIMOSFET™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A
Power - Max: 250W
Switching Energy: -
Input Type: Standard
Gate Charge: 72nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.32µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)

In Stock272

IRG4PC60FPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 90A 520W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Power - Max: 520W
Switching Energy: 300µJ (on), 4.6mJ (off)
Input Type: Standard
Gate Charge: 290nC
Td (on/off) @ 25°C: 42ns/310ns
Test Condition: 480V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock445

IRG4PH50UDPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 45A 200W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 24A
Power - Max: 200W
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: 47ns/110ns
Test Condition: 800V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

Request a Quote

IKW75N60TFKSA1

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 80A 428W TO247-3

Manufacturer: Infineon Technologies
Series: TrenchStop®
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 428W
Switching Energy: 4.5mJ
Input Type: Standard
Gate Charge: 470nC
Td (on/off) @ 25°C: 33ns/330ns
Test Condition: 400V, 75A, 5Ohm, 15V
Reverse Recovery Time (trr): 121ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

In Stock4,162

AIKW50N60CTXKSA1

Infineon Technologies

Transistors - IGBTs - Single

IC DISCRETE 600V TO247-3

Manufacturer: Infineon Technologies
Series: Automotive, AEC-Q101, TrenchStop™
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 333W
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 26ns/299ns
Test Condition: 400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-41

In Stock6,701

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