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IXGF25N250

IXGF25N250

For Reference Only

Part Number IXGF25N250
PNEDA Part # IXGF25N250
Description IGBT 2500V 30A 114W I4-PAK
Manufacturer IXYS
Unit Price
1 ---------- $56.1274
100 ---------- $53.4964
250 ---------- $50.8654
500 ---------- $48.2345
750 ---------- $46.0420
1,000 ---------- $43.8495
In Stock 746
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGF25N250 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGF25N250
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGF25N250, IXGF25N250 Datasheet (Total Pages: 5, Size: 222.95 KB)
PDFIXGF25N250 Datasheet Cover
IXGF25N250 Datasheet Page 2 IXGF25N250 Datasheet Page 3 IXGF25N250 Datasheet Page 4 IXGF25N250 Datasheet Page 5

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IXGF25N250 Specifications

ManufacturerIXYS
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)2500V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic5.2V @ 15V, 75A
Power - Max114W
Switching Energy-
Input TypeStandard
Gate Charge75nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Casei4-Pac™-5 (3 Leads)
Supplier Device PackageISOPLUS i4-PAC™

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 30A

Power - Max

300W

Switching Energy

3.47mJ (on), 2.16mJ (off)

Input Type

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Gate Charge

87nC

Td (on/off) @ 25°C

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Test Condition

960V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

225A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Power - Max

455W

Switching Energy

2.4mJ (on), 720µJ (off)

Input Type

Standard

Gate Charge

123nC

Td (on/off) @ 25°C

28ns/80ns

Test Condition

400V, 75A, 3Ohm, 15V

Reverse Recovery Time (trr)

43.4ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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ON Semiconductor

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 35A

Power - Max

300W

Switching Energy

840µJ (on), 280µJ (off)

Input Type

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Gate Charge

125nC

Td (on/off) @ 25°C

72ns/132ns

Test Condition

400V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

68ns

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-55°C ~ 175°C (TJ)

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Toshiba Semiconductor and Storage

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

20A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 10A

Power - Max

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Switching Energy

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Input Type

Standard

Gate Charge

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Td (on/off) @ 25°C

400ns/400ns

Test Condition

300V, 10A, 100Ohm, 15V

Reverse Recovery Time (trr)

200ns

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-220SM

Manufacturer

IXYS

Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 35A

Power - Max

195W

Switching Energy

3.8mJ (on), 4.1mJ (off)

Input Type

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Gate Charge

106nC

Td (on/off) @ 25°C

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Test Condition

600V, 35A, 27Ohm, 15V

Reverse Recovery Time (trr)

350ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

ISOPLUS247™

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