Instant Offers

Part Number	Description	In Stock
PMEG6010EP,115 Nexperia	Rectifiers - Single DIODE SCHOTTKY 60V 1A SOD128 Manufacturer: Nexperia USA Inc. Series: - Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60µA @ 60V Capacitance @ Vr, F: 120pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: CFP5 Operating Temperature - Junction: 150°C (Max)	In Stock3,481
PMEG2010ER,115 Nexperia	Rectifiers - Single DIODE SCHOTTKY 20V 1A SOD123W Manufacturer: Nexperia USA Inc. Series: - Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 340mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 175pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: CFP3 Operating Temperature - Junction: 150°C (Max)	In Stock4,280
PMEG4010ER,115 Nexperia	Rectifiers - Single DIODE SCHOTTKY 40V 1A SOD123W Manufacturer: Nexperia USA Inc. Series: - Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 40V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: CFP3 Operating Temperature - Junction: 150°C (Max)	In Stock43,800
BAS3010A03WE6327HTSA1 Infineon Technologies	Rectifiers - Single DIODE SCHOTTKY 30V 1A SOD323-2 Manufacturer: Infineon Technologies Series: - Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 35pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: -65°C ~ 125°C	Request a Quote
GS1G-LTP Micro Commercial Co	Rectifiers - Single DIODE GEN PURP 400V 1A DO214AC Manufacturer: Micro Commercial Co Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	In Stock34,823
RJH65T14DPQ-A0#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT TRENCH 650V 100A TO247A Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A Power - Max: 250W Switching Energy: 1.3mJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 38ns/125ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 250ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247A	In Stock88
IRGP4760D-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 650V TO-247 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 144A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A Power - Max: 325W Switching Energy: 1.7mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 48A, 10Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock127
IRG8P40N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 60A 305W TO-247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: 305W Switching Energy: 1.6mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock128
IRGP4690DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 140A 454W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 454W Switching Energy: 2.47mJ (on), 2.16mJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: 50ns/200ns Test Condition: 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): 155ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock121
NGTB60N60SWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 120A 298W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Power - Max: 298W Switching Energy: 1.41mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 173nC Td (on/off) @ 25°C: 87ns/180ns Test Condition: 400V, 60A, 10Ohm, 15V Reverse Recovery Time (trr): 76ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock1,664
STGWA40M120DF3 STMicroelectronics	Transistors - IGBTs - Single IGBT 1200V 80A 468W TO-247-3 Manufacturer: STMicroelectronics Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 468W Switching Energy: 1.03mJ (on), 480µJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 35ns/140ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 355ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock185
IRGP6630DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 47A 192W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 47A Current - Collector Pulsed (Icm): 54A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Power - Max: 192W Switching Energy: 75µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 40ns/95ns Test Condition: 400V, 18A, 22Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock9,609
IRGPS66160DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 160A TO247 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A Power - Max: 750W Switching Energy: 4.47mJ (on), 3.43mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 80ns/190ns Test Condition: 400V, 120A, 4.7Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock1,669
NGTB25N120FLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 25A TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: 192W Switching Energy: 1.5mJ (on), 950µJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 91ns/228ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 240ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,045
NGTB40N60FLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 80A 257W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 257W Switching Energy: 890µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 171nC Td (on/off) @ 25°C: 85ns/174ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 77ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,486
RJH1CF5RDPQ-80#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1200V 50A 192.3W TO247 Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 192.3W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,044
IRGP4266PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 650V 140A 450W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 450W Switching Energy: 3.2mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 80ns/200ns Test Condition: 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock2,658
IRG7PH37K10D-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 216W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 216W Switching Energy: 1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 50ns/240ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock139
AUIRGPS4067D1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 240A 750W TO-274 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A Power - Max: 750W Switching Energy: 8.2mJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 360nC Td (on/off) @ 25°C: 69ns/198ns Test Condition: 400V, 120A, 4.7Ohm, 15V Reverse Recovery Time (trr): 360ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock398
IRGPS4067DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 240A 750W SUPER-247 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A Power - Max: 750W Switching Energy: 5.75mJ (on), 3.43mJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 80ns/190ns Test Condition: 400V, 120A, 4.7Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock1,289
APT44GA60B Microsemi	Transistors - IGBTs - Single IGBT 600V 78A 337W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 130A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Power - Max: 337W Switching Energy: 409µJ (on), 258µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 16ns/84ns Test Condition: 400V, 26A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock1,083
APT102GA60B2 Microsemi	Transistors - IGBTs - Single IGBT 600V 183A 780W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 183A Current - Collector Pulsed (Icm): 307A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A Power - Max: 780W Switching Energy: 1.354mJ (on), 1.614mJ (off) Input Type: Standard Gate Charge: 294nC Td (on/off) @ 25°C: 28ns/212ns Test Condition: 400V, 62A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock305
RJH60D3DPP-M0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 600V 35A 30W TO220FL Manufacturer: Renesas Electronics America Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A Power - Max: 40W Switching Energy: 200µJ (on), 210µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 35ns/80ns Test Condition: 300V, 17A, 5Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	In Stock2,577
RJH1BF7RDPQ-80#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1100V 60A 250W TO247 Manufacturer: Renesas Electronics America Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1100V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A Power - Max: 250W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock6,150
AUIRGP50B60PD1E Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 75A 390W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A Power - Max: 390W Switching Energy: 255µJ (on), 375µJ (off) Input Type: Standard Gate Charge: 205nC Td (on/off) @ 25°C: 30ns/130ns Test Condition: 390V, 33A, 3.3Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock20,494
AUIRGP50B60PD1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 75A 390W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A Power - Max: 390W Switching Energy: 255µJ (on), 375µJ (off) Input Type: Standard Gate Charge: 205nC Td (on/off) @ 25°C: 30ns/130ns Test Condition: 390V, 33A, 3.3Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock126
IRGR3B60KD2TRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 7.8A 52W DPAK Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 7.8A Current - Collector Pulsed (Icm): 15.6A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A Power - Max: 52W Switching Energy: 62µJ (on), 39µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 18ns/110ns Test Condition: 400V, 3A, 100Ohm, 15V Reverse Recovery Time (trr): 77ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock3,565
IRG7PH42UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A 313W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: -/270ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock2
SKW20N60FKSA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 40A 179W TO247-3 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: 179W Switching Energy: 440µJ (on), 330µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 36ns/225ns Test Condition: 400V, 20A, 16Ohm, 15V Reverse Recovery Time (trr): 300ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	In Stock172,581
IHW15T120FKSA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 113W TO247-3 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 113W Switching Energy: 2.7mJ Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 50ns/520ns Test Condition: 600V, 15A, 56Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	In Stock154,847

PMEG6010EP,115

Nexperia

Rectifiers - Single

DIODE SCHOTTKY 60V 1A SOD128

Manufacturer: Nexperia USA Inc.
Series: -
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60µA @ 60V
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: CFP5
Operating Temperature - Junction: 150°C (Max)

In Stock3,481

PMEG2010ER,115

Nexperia

Rectifiers - Single

DIODE SCHOTTKY 20V 1A SOD123W

Manufacturer: Nexperia USA Inc.
Series: -
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 340mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: CFP3
Operating Temperature - Junction: 150°C (Max)

In Stock4,280

PMEG4010ER,115

Nexperia

Rectifiers - Single

DIODE SCHOTTKY 40V 1A SOD123W

Manufacturer: Nexperia USA Inc.
Series: -
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 40V
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: CFP3
Operating Temperature - Junction: 150°C (Max)

In Stock43,800

BAS3010A03WE6327HTSA1

Infineon Technologies

Rectifiers - Single

DIODE SCHOTTKY 30V 1A SOD323-2

Manufacturer: Infineon Technologies
Series: -
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 35pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: -65°C ~ 125°C

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GS1G-LTP

Micro Commercial Co

Rectifiers - Single

DIODE GEN PURP 400V 1A DO214AC

Manufacturer: Micro Commercial Co
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

In Stock34,823

RJH65T14DPQ-A0#T0

Renesas Electronics America

Transistors - IGBTs - Single

IGBT TRENCH 650V 100A TO247A

Manufacturer: Renesas Electronics America
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
Power - Max: 250W
Switching Energy: 1.3mJ (on), 1.2mJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 38ns/125ns
Test Condition: 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 250ns
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247A

In Stock88

IRGP4760D-EPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V TO-247

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Power - Max: 325W
Switching Energy: 1.7mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

In Stock127

IRG8P40N120KDPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 60A 305W TO-247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Power - Max: 305W
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Input Type: Standard
Gate Charge: 240nC
Td (on/off) @ 25°C: 40ns/245ns
Test Condition: 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr): 80ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock128

IRGP4690DPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 140A 454W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 454W
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): 155ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock121

NGTB60N60SWG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 120A 298W TO247

Manufacturer: ON Semiconductor
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Power - Max: 298W
Switching Energy: 1.41mJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 173nC
Td (on/off) @ 25°C: 87ns/180ns
Test Condition: 400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr): 76ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock1,664

STGWA40M120DF3

STMicroelectronics

Transistors - IGBTs - Single

IGBT 1200V 80A 468W TO-247-3

Manufacturer: STMicroelectronics
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 468W
Switching Energy: 1.03mJ (on), 480µJ (off)
Input Type: Standard
Gate Charge: 125nC
Td (on/off) @ 25°C: 35ns/140ns
Test Condition: 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): 355ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock185

IRGP6630DPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 47A 192W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 47A
Current - Collector Pulsed (Icm): 54A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Power - Max: 192W
Switching Energy: 75µJ (on), 350µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 40ns/95ns
Test Condition: 400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock9,609

IRGPS66160DPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 160A TO247

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 240A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A
Power - Max: 750W
Switching Energy: 4.47mJ (on), 3.43mJ (off)
Input Type: Standard
Gate Charge: 220nC
Td (on/off) @ 25°C: 80ns/190ns
Test Condition: 400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 95ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)

In Stock1,669

NGTB25N120FLWG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 25A TO247-3

Manufacturer: ON Semiconductor
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Power - Max: 192W
Switching Energy: 1.5mJ (on), 950µJ (off)
Input Type: Standard
Gate Charge: 220nC
Td (on/off) @ 25°C: 91ns/228ns
Test Condition: 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr): 240ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock5,045

NGTB40N60FLWG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 80A 257W TO247

Manufacturer: ON Semiconductor
Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 257W
Switching Energy: 890µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 171nC
Td (on/off) @ 25°C: 85ns/174ns
Test Condition: 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): 77ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock4,486

RJH1CF5RDPQ-80#T2

Renesas Electronics America

Transistors - IGBTs - Single

IGBT 1200V 50A 192.3W TO247

Manufacturer: Renesas Electronics America
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Power - Max: 192.3W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

In Stock7,044

IRGP4266PBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V 140A 450W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 450W
Switching Energy: 3.2mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 80ns/200ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock2,658

IRG7PH37K10D-EPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 45A 216W TO247AD

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Power - Max: 216W
Switching Energy: 1mJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 135nC
Td (on/off) @ 25°C: 50ns/240ns
Test Condition: 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): 120ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

In Stock139

AUIRGPS4067D1

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 240A 750W TO-274

Manufacturer: Infineon Technologies
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 240A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
Power - Max: 750W
Switching Energy: 8.2mJ (on), 2.9mJ (off)
Input Type: Standard
Gate Charge: 360nC
Td (on/off) @ 25°C: 69ns/198ns
Test Condition: 400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 360ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: SUPER-247™ (TO-274AA)

In Stock398

IRGPS4067DPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 240A 750W SUPER-247

Manufacturer: Infineon Technologies
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 240A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
Power - Max: 750W
Switching Energy: 5.75mJ (on), 3.43mJ (off)
Input Type: Standard
Gate Charge: 240nC
Td (on/off) @ 25°C: 80ns/190ns
Test Condition: 400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 130ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)

In Stock1,289

APT44GA60B

Microsemi

Transistors - IGBTs - Single

IGBT 600V 78A 337W TO-247

Manufacturer: Microsemi Corporation
Series: POWER MOS 8™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 130A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Power - Max: 337W
Switching Energy: 409µJ (on), 258µJ (off)
Input Type: Standard
Gate Charge: 128nC
Td (on/off) @ 25°C: 16ns/84ns
Test Condition: 400V, 26A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

In Stock1,083

APT102GA60B2

Microsemi

Transistors - IGBTs - Single

IGBT 600V 183A 780W TO247

Manufacturer: Microsemi Corporation
Series: POWER MOS 8™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 183A
Current - Collector Pulsed (Icm): 307A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
Power - Max: 780W
Switching Energy: 1.354mJ (on), 1.614mJ (off)
Input Type: Standard
Gate Charge: 294nC
Td (on/off) @ 25°C: 28ns/212ns
Test Condition: 400V, 62A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

In Stock305

RJH60D3DPP-M0#T2

Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 35A 30W TO220FL

Manufacturer: Renesas Electronics America
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 35A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A
Power - Max: 40W
Switching Energy: 200µJ (on), 210µJ (off)
Input Type: Standard
Gate Charge: 37nC
Td (on/off) @ 25°C: 35ns/80ns
Test Condition: 300V, 17A, 5Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FL

In Stock2,577

RJH1BF7RDPQ-80#T2

Renesas Electronics America

Transistors - IGBTs - Single

IGBT 1100V 60A 250W TO247

Manufacturer: Renesas Electronics America
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1100V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
Power - Max: 250W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock6,150

AUIRGP50B60PD1E

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 75A 390W TO247AD

Manufacturer: Infineon Technologies
Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Power - Max: 390W
Switching Energy: 255µJ (on), 375µJ (off)
Input Type: Standard
Gate Charge: 205nC
Td (on/off) @ 25°C: 30ns/130ns
Test Condition: 390V, 33A, 3.3Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

In Stock20,494

AUIRGP50B60PD1

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 75A 390W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Power - Max: 390W
Switching Energy: 255µJ (on), 375µJ (off)
Input Type: Standard
Gate Charge: 205nC
Td (on/off) @ 25°C: 30ns/130ns
Test Condition: 390V, 33A, 3.3Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock126

IRGR3B60KD2TRLP

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 7.8A 52W DPAK

Manufacturer: Infineon Technologies
Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 7.8A
Current - Collector Pulsed (Icm): 15.6A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Power - Max: 52W
Switching Energy: 62µJ (on), 39µJ (off)
Input Type: Standard
Gate Charge: 13nC
Td (on/off) @ 25°C: 18ns/110ns
Test Condition: 400V, 3A, 100Ohm, 15V
Reverse Recovery Time (trr): 77ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

In Stock3,565

IRG7PH42UD1PBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 85A 313W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 85A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 313W
Switching Energy: 1.21mJ (off)
Input Type: Standard
Gate Charge: 180nC
Td (on/off) @ 25°C: -/270ns
Test Condition: 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock2

SKW20N60FKSA1

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 40A 179W TO247-3

Manufacturer: Infineon Technologies
Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Power - Max: 179W
Switching Energy: 440µJ (on), 330µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 36ns/225ns
Test Condition: 400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr): 300ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

In Stock172,581

IHW15T120FKSA1

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 30A 113W TO247-3

Manufacturer: Infineon Technologies
Series: TrenchStop®
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 113W
Switching Energy: 2.7mJ
Input Type: Standard
Gate Charge: 85nC
Td (on/off) @ 25°C: 50ns/520ns
Test Condition: 600V, 15A, 56Ohm, 15V
Reverse Recovery Time (trr): 140ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

In Stock154,847

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