Instant Offers

Part Number	Description	In Stock
IRG4PC40UD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 40A 160W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 160W Switching Energy: 710µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 54ns/110ns Test Condition: 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock289
FGH30S150P ON Semiconductor	Transistors - IGBTs - Single IGBT 1500V 60A TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1500V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 500W Switching Energy: 1.16mJ (on), 900µJ (off) Input Type: Standard Gate Charge: 369nC Td (on/off) @ 25°C: 32ns/492ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock2,802
IXBX55N300 IXYS	Transistors - IGBTs - Single IGBT 3000V 130A 625W PLUS247 Manufacturer: IXYS Series: BIMOSFET™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 130A Current - Collector Pulsed (Icm): 600A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A Power - Max: 625W Switching Energy: - Input Type: Standard Gate Charge: 335nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.9µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247™-3	In Stock2,277
IXBH32N300 IXYS	Transistors - IGBTs - Single IGBT 3000V 80A 400W TO247 Manufacturer: IXYS Series: BIMOSFET™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A Power - Max: 400W Switching Energy: - Input Type: Standard Gate Charge: 142nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.5µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	In Stock1,259
IXLF19N250A IXYS	Transistors - IGBTs - Single IGBT 2500V 32A 250W I4PAC Manufacturer: IXYS Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A Power - Max: 250W Switching Energy: 15mJ (on), 30mJ (off) Input Type: Standard Gate Charge: 142nC Td (on/off) @ 25°C: - Test Condition: 1500V, 19A, 47Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac™-5 (3 Leads) Supplier Device Package: ISOPLUS i4-PAC™	In Stock354
APT75GP120B2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 100A 1042W TMAX Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A Power - Max: 1042W Switching Energy: 1620µJ (on), 2500µJ (off) Input Type: Standard Gate Charge: 320nC Td (on/off) @ 25°C: 20ns/163ns Test Condition: 600V, 75A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock259
IXBH12N300 IXYS	Transistors - IGBTs - Single IGBT 3000V 30A 160W TO247 Manufacturer: IXYS Series: BIMOSFET™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A Power - Max: 160W Switching Energy: - Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.4µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	In Stock51
IRGPS60B120KDP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 105A 595W SUPER247 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 105A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 60A Power - Max: 595W Switching Energy: 3.21mJ (on), 4.78mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: - Test Condition: 600V, 15A, 4.7Ohm, 15V Reverse Recovery Time (trr): 180ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	Request a Quote
IXGH32N170 IXYS	Transistors - IGBTs - Single IGBT 1700V 75A 350W TO247AD Manufacturer: IXYS Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A Power - Max: 350W Switching Energy: 11mJ (off) Input Type: Standard Gate Charge: 155nC Td (on/off) @ 25°C: 45ns/270ns Test Condition: 1020V, 32A, 2.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	In Stock2,891
AIKQ120N60CTXKSA1 Infineon Technologies	Transistors - IGBTs - Single IC DISCRETE 600V TO247-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, TrenchStop™ IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 480A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A Power - Max: 833W Switching Energy: 4.1mJ (on), 2.8mJ (off) Input Type: Standard Gate Charge: 772nC Td (on/off) @ 25°C: 33ns/310ns Test Condition: 400V, 120A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	In Stock4,846
IKW75N65EL5XKSA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 650V 75A FAST DIODE TO247-3 Manufacturer: Infineon Technologies Series: TrenchStop™ 5 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Power - Max: 536W Switching Energy: 1.61mJ (on), 3.2mJ (off) Input Type: Standard Gate Charge: 436nC Td (on/off) @ 25°C: 40ns/275ns Test Condition: 400V, 75A, 4Ohm, 15V Reverse Recovery Time (trr): 114ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	In Stock4,367
IRG4PC50FDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 70A 200W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Power - Max: 200W Switching Energy: 1.5mJ (on), 2.4mJ (off) Input Type: Standard Gate Charge: 190nC Td (on/off) @ 25°C: 55ns/240ns Test Condition: 480V, 39A, 5Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock472
IRG4PH50UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 200W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 24A Power - Max: 200W Switching Energy: 530µJ (on), 1.41mJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 35ns/200ns Test Condition: 960V, 24A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock3,392
2SK3902(0)-ZK-E1-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock229
2SJ648-T1-A Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,783
IXFN24N100F IXYS-RF	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 24A SOT227B Manufacturer: IXYS-RF Series: HiPerRF™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V FET Feature: - Power Dissipation (Max): 600W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock225
JANTXV2N7225 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 27.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock3,955
JANTXV2N7224 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 34A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock275
JANTXV2N6798 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/557 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock422
JANTXV2N6766 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	In Stock55
JANTX2N7228U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	In Stock5,601
JANTX2N7228 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock398
JANTX2N7224 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 34A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock8
JANTX2N6766 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-204AE TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	In Stock6
JANTX2N6764 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-204AE TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	In Stock277
JANTX2N6758 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-204AA TO-3 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/542 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	In Stock221
SUD35N05-26L-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 35A TO252 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 25V FET Feature: - Power Dissipation (Max): 7.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock36,405
SUD23N06-31L-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO252 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock484
AOD200 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14A TO252 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,684
IXFK66N50Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 66A TO-264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V FET Feature: - Power Dissipation (Max): 735W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Request a Quote

IRG4PC40UD-EPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 40A 160W TO247AD

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Power - Max: 160W
Switching Energy: 710µJ (on), 350µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 54ns/110ns
Test Condition: 480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock289

FGH30S150P

ON Semiconductor

Transistors - IGBTs - Single

IGBT 1500V 60A TO-247

Manufacturer: ON Semiconductor
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1500V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Power - Max: 500W
Switching Energy: 1.16mJ (on), 900µJ (off)
Input Type: Standard
Gate Charge: 369nC
Td (on/off) @ 25°C: 32ns/492ns
Test Condition: 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

In Stock2,802

IXBX55N300

IXYS

Transistors - IGBTs - Single

IGBT 3000V 130A 625W PLUS247

Manufacturer: IXYS
Series: BIMOSFET™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 130A
Current - Collector Pulsed (Icm): 600A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
Power - Max: 625W
Switching Energy: -
Input Type: Standard
Gate Charge: 335nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.9µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247™-3

In Stock2,277

IXBH32N300

IXYS

Transistors - IGBTs - Single

IGBT 3000V 80A 400W TO247

Manufacturer: IXYS
Series: BIMOSFET™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 280A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Power - Max: 400W
Switching Energy: -
Input Type: Standard
Gate Charge: 142nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.5µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)

In Stock1,259

IXLF19N250A

IXYS

Transistors - IGBTs - Single

IGBT 2500V 32A 250W I4PAC

Manufacturer: IXYS
Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 32A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
Power - Max: 250W
Switching Energy: 15mJ (on), 30mJ (off)
Input Type: Standard
Gate Charge: 142nC
Td (on/off) @ 25°C: -
Test Condition: 1500V, 19A, 47Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5 (3 Leads)
Supplier Device Package: ISOPLUS i4-PAC™

In Stock354

APT75GP120B2G

Microsemi

Transistors - IGBTs - Single

IGBT 1200V 100A 1042W TMAX

Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Power - Max: 1042W
Switching Energy: 1620µJ (on), 2500µJ (off)
Input Type: Standard
Gate Charge: 320nC
Td (on/off) @ 25°C: 20ns/163ns
Test Condition: 600V, 75A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

In Stock259

IXBH12N300

IXYS

Transistors - IGBTs - Single

IGBT 3000V 30A 160W TO247

Manufacturer: IXYS
Series: BIMOSFET™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Power - Max: 160W
Switching Energy: -
Input Type: Standard
Gate Charge: 62nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.4µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)

In Stock51

IRGPS60B120KDP

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 105A 595W SUPER247

Manufacturer: Infineon Technologies
Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 105A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 60A
Power - Max: 595W
Switching Energy: 3.21mJ (on), 4.78mJ (off)
Input Type: Standard
Gate Charge: 340nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 15A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 180ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)

Request a Quote

IXGH32N170

IXYS

Transistors - IGBTs - Single

IGBT 1700V 75A 350W TO247AD

Manufacturer: IXYS
Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
Power - Max: 350W
Switching Energy: 11mJ (off)
Input Type: Standard
Gate Charge: 155nC
Td (on/off) @ 25°C: 45ns/270ns
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

In Stock2,891

AIKQ120N60CTXKSA1

Infineon Technologies

Transistors - IGBTs - Single

IC DISCRETE 600V TO247-3

Manufacturer: Infineon Technologies
Series: Automotive, AEC-Q101, TrenchStop™
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): 480A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Power - Max: 833W
Switching Energy: 4.1mJ (on), 2.8mJ (off)
Input Type: Standard
Gate Charge: 772nC
Td (on/off) @ 25°C: 33ns/310ns
Test Condition: 400V, 120A, 3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-46

In Stock4,846

IKW75N65EL5XKSA1

Infineon Technologies

Transistors - IGBTs - Single

IGBT 650V 75A FAST DIODE TO247-3

Manufacturer: Infineon Technologies
Series: TrenchStop™ 5
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Power - Max: 536W
Switching Energy: 1.61mJ (on), 3.2mJ (off)
Input Type: Standard
Gate Charge: 436nC
Td (on/off) @ 25°C: 40ns/275ns
Test Condition: 400V, 75A, 4Ohm, 15V
Reverse Recovery Time (trr): 114ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

In Stock4,367

IRG4PC50FDPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 70A 200W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 280A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Power - Max: 200W
Switching Energy: 1.5mJ (on), 2.4mJ (off)
Input Type: Standard
Gate Charge: 190nC
Td (on/off) @ 25°C: 55ns/240ns
Test Condition: 480V, 39A, 5Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock472

IRG4PH50UPBF

Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 45A 200W TO247AC

Manufacturer: Infineon Technologies
Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 24A
Power - Max: 200W
Switching Energy: 530µJ (on), 1.41mJ (off)
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: 35ns/200ns
Test Condition: 960V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

In Stock3,392

2SK3902(0)-ZK-E1-AY

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

TRANSISTOR

Manufacturer: Renesas Electronics America
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

In Stock229

2SJ648-T1-A

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

TRANSISTOR

Manufacturer: Renesas Electronics America
Series: -
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

In Stock2,783

IXFN24N100F

IXYS-RF

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 24A SOT227B

Manufacturer: IXYS-RF
Series: HiPerRF™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
FET Feature: -
Power Dissipation (Max): 600W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock225

JANTXV2N7225

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/592
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 27.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)

In Stock3,955

JANTXV2N7224

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 34A

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/592
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)

In Stock275

JANTXV2N6798

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/557
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-205AF (TO-39)
Package / Case: TO-205AF Metal Can

In Stock422

JANTXV2N6766

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/543
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-204AE

In Stock55

JANTX2N7228U

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/592
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB

In Stock5,601

JANTX2N7228

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/592
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)

In Stock398

JANTX2N7224

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 34A

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/592
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)

In Stock8

JANTX2N6766

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO-204AE TO-3

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/543
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-204AE

In Stock6

JANTX2N6764

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO-204AE TO-3

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/543
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-204AE

In Stock277

JANTX2N6758

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO-204AA TO-3

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/542
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3

In Stock221

SUD35N05-26L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 35A TO252

Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 25V
FET Feature: -
Power Dissipation (Max): 7.5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock36,405

SUD23N06-31L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V TO252

Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock484

AOD200

Alpha & Omega Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 14A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock7,684

IXFK66N50Q2

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 66A TO-264

Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
FET Feature: -
Power Dissipation (Max): 735W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

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