Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 71/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 200V 9.4A DPAK |
5,652 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | ±30V | 560pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 35A DPAK |
6,156 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | ±20V | 1690pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 43A TO252-3 |
5,562 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 43A (Tc) | 6V, 10V | 18mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1800pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3 |
8,028 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 28µA | 26nC @ 10V | ±20V | 1750pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 14.9A TDSON-8 |
3,240 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 14.9A (Ta), 78.6A (Tc) | 6V, 10V | 8.4mOhm @ 50A, 10V | 3V @ 110µA | 57.7nC @ 10V | ±25V | 4240pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 20V 7A 8DSO |
5,364 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 7A (Ta) | 2.5V, 4.5V | 21mOhm @ 8.9A, 4.5V | 1.2V @ 100µA | 39nC @ 4.5V | ±12V | 3750pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12A DIRECTFET |
3,636 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 55A (Tc) | 4.5V, 10V | 9.1mOhm @ 12A, 10V | 2.25V @ 250µA | 17.5nC @ 4.5V | ±20V | 1460pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 30V 140A DPAK |
6,480 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4010pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 77A DIRECTFET2 |
8,082 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.1A (Ta), 14.4A (Tc) | 10V | 62mOhm @ 8.9A, 10V | 5V @ 25µA | 13nC @ 10V | ±20V | 515pF @ 25V | - | 2.4W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET SB | DirectFET™ Isometric SB |
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Infineon Technologies |
MV POWER MOS |
5,274 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 1.5A SOT-223 |
7,614 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 1.5A (Ta) | 10V | 160mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 190pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 8TSON |
6,138 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 3A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 11nC @ 10V | ±20V | 225pF @ 100V | - | 26.6W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-PAK (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 93A DPAK |
6,822 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2160pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 500V 3.6A TO220AB |
7,074 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 5V @ 250µA | 20nC @ 10V | ±20V | 810pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
TRANSISTOR N-CH |
4,842 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 400V 0.21A SOT-223 |
8,082 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 210mA (Ta) | 0V, 10V | 18Ohm @ 210mA, 10V | 1V @ 94µA | 6.8nC @ 5V | ±20V | 135pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2,178 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 90A |
4,734 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4360pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL_100+ |
2,484 |
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Infineon Technologies |
MOSFET N-CH 20V 100A DPAK |
8,406 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 2.5W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 100A DPAK |
7,218 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 2.5W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB |
6,876 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | ±16V | 1620pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 14A SQ |
3,780 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 60A (Tc) | 4.5V, 10V | 7.3mOhm @ 14A, 10V | 2.4V @ 25µA | 14nC @ 4.5V | ±20V | 1430pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
8,838 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 12.2mOhm @ 60A, 10V | 3.5V @ 46µA | 34nC @ 10V | ±20V | 2470pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SMALL SIGNAL+P-CH |
2,916 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
4,068 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 42nC @ 10V | ±20V | 1200pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 1A SAWN ON FOIL |
6,408 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 1A (Tj) | 4.5V, 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 55V 44A DPAK |
3,024 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1300pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
4,392 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 23mOhm @ 21A, 10V | 4V @ 50µA | 32nC @ 10V | ±20V | 901pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 91A DPAK |
4,950 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 91A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 5V | ±20V | 2672pF @ 16V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |