IPD30N03S2L10ATMA1
For Reference Only
| Part Number | IPD30N03S2L10ATMA1 |
| PNEDA Part # | IPD30N03S2L10ATMA1 |
| Description | MOSFET N-CH 30V 30A TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,068 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPD30N03S2L10ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPD30N03S2L10ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPD30N03S2L10ATMA1 Datasheet
- where to find IPD30N03S2L10ATMA1
- Infineon Technologies
- Infineon Technologies IPD30N03S2L10ATMA1
- IPD30N03S2L10ATMA1 PDF Datasheet
- IPD30N03S2L10ATMA1 Stock
- IPD30N03S2L10ATMA1 Pinout
- Datasheet IPD30N03S2L10ATMA1
- IPD30N03S2L10ATMA1 Supplier
- Infineon Technologies Distributor
- IPD30N03S2L10ATMA1 Price
- IPD30N03S2L10ATMA1 Distributor
IPD30N03S2L10ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
|
Manufacturer IXYS Series TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 140A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 70A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 174nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9700pF @ 25V FET Feature - Power Dissipation (Max) 577W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 3Ohm @ 115mA, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.87nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V FET Feature - Power Dissipation (Max) 300mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323 Package / Case SC-70, SOT-323 |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 560V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V FET Feature - Power Dissipation (Max) 32W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-FP Package / Case TO-220-3 Full Pack |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.8Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 4.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3F Package / Case TO-220-3 Full Pack |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
