Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLR7833TRLPBF

IRLR7833TRLPBF

For Reference Only

Part Number IRLR7833TRLPBF
PNEDA Part # IRLR7833TRLPBF
Description MOSFET N-CH 30V 140A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLR7833TRLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLR7833TRLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLR7833TRLPBF Datasheet
  • where to find IRLR7833TRLPBF
  • Infineon Technologies

  • Infineon Technologies IRLR7833TRLPBF
  • IRLR7833TRLPBF PDF Datasheet
  • IRLR7833TRLPBF Stock

  • IRLR7833TRLPBF Pinout
  • Datasheet IRLR7833TRLPBF
  • IRLR7833TRLPBF Supplier

  • Infineon Technologies Distributor
  • IRLR7833TRLPBF Price
  • IRLR7833TRLPBF Distributor

IRLR7833TRLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4010pF @ 15V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

SIHD9N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

368mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

778pF @ 100V

FET Feature

-

Power Dissipation (Max)

78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252AA)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

ZDS020N60TB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

630mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

STB28NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 100V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

2SK3430-Z-E1-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

7.3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 84W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

RRH090P03TB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

15.4mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 10V

FET Feature

-

Power Dissipation (Max)

650mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

RCLAMP0502BATCT

RCLAMP0502BATCT

Semtech

TVS DIODE 5V 25V SC75

SMBJ16A

SMBJ16A

Taiwan Semiconductor Corporation

TVS DIODE 16V 26V DO214AA

AUIPS2031R

AUIPS2031R

Infineon Technologies

IC SW IPS 1CH LOW SIDE DPAK

PSMN4R5-30YLC,115

PSMN4R5-30YLC,115

Nexperia

MOSFET N-CH 30V 84A LFPAK

ZTB800J

ZTB800J

ECS

CER RES 800.0000KHZ T/H

SI8901D-A01-GS

SI8901D-A01-GS

Silicon Labs

IC ADC 10BIT SAR 16SOIC

LS4148-GS08

LS4148-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A

MUR1100ERLG

MUR1100ERLG

ON Semiconductor

DIODE GEN PURP 1KV 1A AXIAL

NC7SZ125M5X

NC7SZ125M5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SOT23-5

74HC14DR2G

74HC14DR2G

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

4TPE100MZB

4TPE100MZB

Panasonic Electronic Components

CAP TANT POLY 100UF 4V 1411