Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLZ44ZPBF

IRLZ44ZPBF

For Reference Only

Part Number IRLZ44ZPBF
PNEDA Part # IRLZ44ZPBF
Description MOSFET N-CH 55V 51A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,876
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLZ44ZPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLZ44ZPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLZ44ZPBF Datasheet
  • where to find IRLZ44ZPBF
  • Infineon Technologies

  • Infineon Technologies IRLZ44ZPBF
  • IRLZ44ZPBF PDF Datasheet
  • IRLZ44ZPBF Stock

  • IRLZ44ZPBF Pinout
  • Datasheet IRLZ44ZPBF
  • IRLZ44ZPBF Supplier

  • Infineon Technologies Distributor
  • IRLZ44ZPBF Price
  • IRLZ44ZPBF Distributor

IRLZ44ZPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs13.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1620pF @ 25V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

NTD4970NT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta), 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

774pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.38W (Ta), 24.6W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

GP2M011A090NG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3240pF @ 25V

FET Feature

-

Power Dissipation (Max)

416W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

FDMC86183

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

12.8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1515pF @ 50V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (3.3x3.3), Power33

Package / Case

8-PowerWDFN

IRLH5030TR2PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

94nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5185pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6) Single Die

Package / Case

8-PowerVDFN

DMN3018SFG-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

21mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13.2nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

697pF @ 15V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

Recently Sold

B39162B4300F210

B39162B4300F210

Qualcomm

FILTER SAW 1.575GHZ 5SMD

NC7SZ125P5X

NC7SZ125P5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-5

PS2801C-4-A

PS2801C-4-A

CEL

OPTOISO 2.5KV 4CH TRANS 16SSOP

MCP1725T-3302E/MC

MCP1725T-3302E/MC

Microchip Technology

IC REG LINEAR 3.3V 500MA 8DFN

IPA60R360P7SXKSA1

IPA60R360P7SXKSA1

Infineon Technologies

MOSFET N-CHANNEL 600V 9A TO220

M25PX16-VMW6TG TR

M25PX16-VMW6TG TR

Micron Technology Inc.

IC FLASH 16M SPI 75MHZ 8SO

RB751V40T1G

RB751V40T1G

ON Semiconductor

DIODE SCHOTTKY 30V 30MA SOD323

NAND256W3A2BN6E

NAND256W3A2BN6E

Micron Technology Inc.

IC FLASH 256M PARALLEL 48TSOP

AT28C16-15TC

AT28C16-15TC

Microchip Technology

IC EEPROM 16K PARALLEL 28TSOP

MMBTA42LT3G

MMBTA42LT3G

ON Semiconductor

TRANS NPN 300V 0.5A SOT-23

250S130-RADR

250S130-RADR

Littelfuse

PTC RESET FUSE 60V 130MA 2SMD

IR2113STRPBF

IR2113STRPBF

Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16SOIC