Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 68/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK |
6,750 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO252 |
7,452 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 4A TO252-3 |
2,880 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 4A (Tc) | 10V | 1Ohm @ 2.8A, 10V | 4V @ 380µA | 12nC @ 10V | ±20V | 319pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
LV POWER MOS |
6,120 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2,754 |
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Infineon Technologies |
MOSFET N-CH 30V 71A TDSON-8 |
2,754 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 5.7mOhm @ 30A, 10V | 2.2V @ 250µA | 30nC @ 10V | ±20V | 2400pF @ 15V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
3,618 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 40A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2V @ 250µA | 40nC @ 10V | ±20V | 3100pF @ 15V | - | 2.1W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 34V 17A TDSON-8 |
3,222 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 17A (Ta), 98A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2.2V @ 250µA | 34nC @ 10V | ±20V | 2800pF @ 15V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 27A TO-252 |
2,070 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 27A (Tc) | 10V | 40mOhm @ 27A, 10V | 4V @ 28µA | 17nC @ 10V | ±20V | 650pF @ 30V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 19A 8PQFN |
2,142 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2.35V @ 25µA | 18nC @ 10V | ±20V | 1667pF @ 10V | - | 2.8W (Ta), 34W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT-223 |
8,370 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1.2A (Ta) | 4.5V, 10V | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | ±20V | 152.7pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
4,878 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 980MA SOT223 |
7,308 |
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SIPMOS™ | P-Channel | MOSFET (Metal Oxide) | 100V | 980mA (Tc) | 10V | 900mOhm @ 980mA, 10V | 4V @ 380µA | 12nC @ 10V | ±20V | 319pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 6A TO252-3 |
2,232 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 30W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
CONSUMER |
2,376 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 30W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
CONSUMER |
2,808 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 650V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-342 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-4 |
8,910 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 250mOhm @ 1.9A, 10V | 2V @ 270µA | 13.9nC @ 10V | ±20V | 420pF @ 30V | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 17A TO252-3 |
2,700 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 80mOhm @ 7A, 10V | 4V @ 14µA | 10nC @ 10V | ±20V | 293pF @ 25V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
CONSUMER |
7,380 |
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Infineon Technologies |
MOSFET N-CH 200V 5A DPAK |
4,500 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MV POWER MOS |
2,100 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
8,604 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 30nC @ 10V | ±20V | 2300pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8DSO |
3,400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 11mOhm @ 12.1A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1500pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 65A DPAK |
5,094 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | 1030pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
6,480 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
8,100 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TDSON-8 |
2,124 |
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- | N-Channel | MOSFET (Metal Oxide) | 34V | - | 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 46nC @ 10V | ±20V | 3700pF @ 15V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
5,004 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
6,282 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | 4V @ 270µA | 10.6nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET COOLMOS 700V 8TSON |
6,984 |
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