SIPC05N80C3X1SA2
For Reference Only
| Part Number | SIPC05N80C3X1SA2 |
| PNEDA Part # | SIPC05N80C3X1SA2 |
| Description | TRANSISTOR N-CH |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,842 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SIPC05N80C3X1SA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | SIPC05N80C3X1SA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SIPC05N80C3X1SA2 Datasheet
- where to find SIPC05N80C3X1SA2
- Infineon Technologies
- Infineon Technologies SIPC05N80C3X1SA2
- SIPC05N80C3X1SA2 PDF Datasheet
- SIPC05N80C3X1SA2 Stock
- SIPC05N80C3X1SA2 Pinout
- Datasheet SIPC05N80C3X1SA2
- SIPC05N80C3X1SA2 Supplier
- Infineon Technologies Distributor
- SIPC05N80C3X1SA2 Price
- SIPC05N80C3X1SA2 Distributor
SIPC05N80C3X1SA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | * |
| FET Type | - |
| Technology | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Supplier Device Package | - |
| Package / Case | - |
The Products You May Be Interested In
|
Manufacturer Microchip Technology Series TinyFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 450mOhm @ 100mA, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 568mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 365pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Toshiba Semiconductor and Storage Series π-MOSVI FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 3.3V, 10V Rds On (Max) @ Id, Vgs 700mOhm @ 200MA, 10V Vgs(th) (Max) @ Id 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 20pF @ 5V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package USM Package / Case SC-70, SOT-323 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251AA Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Toshiba Semiconductor and Storage Series π-MOSVII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 550V Current - Continuous Drain (Id) @ 25°C 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.48Ohm @ 2.8A, 10V Vgs(th) (Max) @ Id 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack |
