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BSC084P03NS3EGATMA1

BSC084P03NS3EGATMA1

For Reference Only

Part Number BSC084P03NS3EGATMA1
PNEDA Part # BSC084P03NS3EGATMA1
Description MOSFET P-CH 30V 14.9A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,240
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC084P03NS3EGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC084P03NS3EGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSC084P03NS3EGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C14.9A (Ta), 78.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3V @ 110µA
Gate Charge (Qg) (Max) @ Vgs57.7nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4240pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-5
Package / Case8-PowerTDFN

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