Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 70/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 8TSON |
2,898 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 26.6W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-PAK (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CHANNEL 60V 47A 8TDSON |
7,650 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 47A (Tc) | 4.5V, 10V | 9.4mOhm @ 24A, 10V | 2.3V @ 14µA | 9.4nC @ 4.5V | ±20V | 1300pF @ 30V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
3,330 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 50A, 10V | 2.2V @ 20µA | 31nC @ 10V | ±16V | 2330pF @ 25V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
6,120 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
3,510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 160A DPAK |
6,426 |
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Infineon Technologies |
MOSFET N-CH 700V 10.1A IPAK |
2,592 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 10.1A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 22A TDSON-8 |
3,544 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 88A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1300pF @ 15V | - | 2.5W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
8,082 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 7.8mOhm @ 50A, 10V | 2.2V @ 35µA | 64nC @ 10V | ±16V | 4780pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
CONSUMER |
5,328 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 41W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
2,880 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | ±16V | 1570pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
3,436 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 8.3mOhm @ 40A, 10V | 2.2V @ 13µA | 20nC @ 10V | ±16V | 1520pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
3,562 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | ±20V | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 2.8A TO-252 |
5,814 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10nC @ 10V | ±20V | 262pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 2.8A TO-252 |
5,022 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10nC @ 10V | ±20V | 262pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
LOW POWER_LEGACY |
2,376 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10nC @ 10V | ±20V | 262pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 8.8A TO-263 |
2,700 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Ta) | 10V | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 420pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
7,164 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | Super Junction | 20W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
6,732 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 13.2mOhm @ 50A, 10V | 4V @ 33µA | 30nC @ 10V | ±20V | 1711pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 35A DPAK |
8,532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | ±20V | 1690pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
CONSUMER |
6,642 |
|
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Infineon Technologies |
MOSFET N-CH 25V 19A 8SON |
5,184 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2V @ 250µA | 18.3nC @ 10V | ±16V | 1230pF @ 12V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
TRANSISTOR P-CH BARE DIE |
6,102 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 800V 4A IPAK-SL |
7,650 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | ±20V | - | Super Junction | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 800V 4A IPAK |
5,796 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10.05nC @ 10V | ±20V | 250pF @ 500V | Super Junction | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 27A 8-SOIC |
4,626 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 27A (Ta) | 2.5V, 4.5V | 2.45mOhm @ 27A, 4.5V | 1.1V @ 100µA | 195nC @ 4.5V | ±12V | 8555pF @ 16V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
CONSUMER |
4,968 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH 30V 7.2A 8DSO |
2,214 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 4.5V, 10V | 21mOhm @ 9.1A, 10V | 2V @ 100µA | 54nC @ 10V | ±20V | 2330pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 500V 4.1A TO-220FP |
5,850 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.1A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4nC @ 10V | ±20V | 280pF @ 100V | - | 26.4W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 20A 8SON |
8,118 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 3.4mOhm @ 20A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1300pF @ 15V | - | 2.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |