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IXTP02N120P

IXTP02N120P

For Reference Only

Part Number IXTP02N120P
PNEDA Part # IXTP02N120P
Description MOSFET N-CH 1200V 0.2A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP02N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP02N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTP02N120P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs75Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs4.7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds104pF @ 25V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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