NVMFS5C410NWFAFT1G
![NVMFS5C410NWFAFT1G](http://pneda.ltd/static/products/images_mk/401/NVMFS5C410NWFAFT1G.webp)
For Reference Only
Part Number | NVMFS5C410NWFAFT1G |
PNEDA Part # | NVMFS5C410NWFAFT1G |
Description | MOSFET N-CH 40V 46A 300A 5DFN |
Manufacturer | ON Semiconductor |
Unit Price | Request a Quote |
In Stock | 4,176 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
NVMFS5C410NWFAFT1G Resources
Brand | ON Semiconductor |
ECAD Module |
![]() |
Mfr. Part Number | NVMFS5C410NWFAFT1G |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
![TT](/res/v2/images/help/p-tt.gif )
![Unionpay](/res/v2/images/help/p-unionpay.gif )
![paypal](/res/v2/images/help/p-paypal.gif )
![paypalwtcreditcard](/res/v2/images/help/p-paypalwtcreditcard.gif )
![alipay](/res/v2/images/help/p-alipay.gif )
![wu](/res/v2/images/help/p-wu.gif )
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
![TNT](/res/v2/images/help/s-tnt.gif )
![UPS](/res/v2/images/help/s-ups.gif )
![Fedex](/res/v2/images/help/s-fedex.gif )
![EMS](/res/v2/images/help/s-ems.gif )
![DHL](/res/v2/images/help/s-dhl.gif )
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NVMFS5C410NWFAFT1G Datasheet
- where to find NVMFS5C410NWFAFT1G
- ON Semiconductor
- ON Semiconductor NVMFS5C410NWFAFT1G
- NVMFS5C410NWFAFT1G PDF Datasheet
- NVMFS5C410NWFAFT1G Stock
- NVMFS5C410NWFAFT1G Pinout
- Datasheet NVMFS5C410NWFAFT1G
- NVMFS5C410NWFAFT1G Supplier
- ON Semiconductor Distributor
- NVMFS5C410NWFAFT1G Price
- NVMFS5C410NWFAFT1G Distributor
NVMFS5C410NWFAFT1G Specifications
Manufacturer | ON Semiconductor |
Series | Automotive, AEC-Q101 |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 0.92mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6100pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.9W (Ta), 166W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Package / Case | 8-PowerTDFN, 5 Leads |
The Products You May Be Interested In
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 18mOhm @ 8A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2774pF @ 25V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width) |
Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 470mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3039pF @ 25V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 486pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 Package / Case 6-UDFN Exposed Pad |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 100mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V FET Feature - Power Dissipation (Max) 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |