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NGTB10N60R2DT4G

NGTB10N60R2DT4G

For Reference Only

Part Number NGTB10N60R2DT4G
PNEDA Part # NGTB10N60R2DT4G
Description IGBT 10A 600V DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB10N60R2DT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB10N60R2DT4G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB10N60R2DT4G, NGTB10N60R2DT4G Datasheet (Total Pages: 7, Size: 619.86 KB)
PDFNGTB10N60R2DT4G Datasheet Cover
NGTB10N60R2DT4G Datasheet Page 2 NGTB10N60R2DT4G Datasheet Page 3 NGTB10N60R2DT4G Datasheet Page 4 NGTB10N60R2DT4G Datasheet Page 5 NGTB10N60R2DT4G Datasheet Page 6 NGTB10N60R2DT4G Datasheet Page 7

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NGTB10N60R2DT4G Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 10A
Power - Max72W
Switching Energy412µJ (on), 140µJ (off)
Input TypeStandard
Gate Charge53nC
Td (on/off) @ 25°C48ns/120ns
Test Condition300V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr)90ns
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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