Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NGTB30N120FL2WG

NGTB30N120FL2WG

For Reference Only

Part Number NGTB30N120FL2WG
PNEDA Part # NGTB30N120FL2WG
Description IGBT 1200V 60A 452W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,334
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB30N120FL2WG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB30N120FL2WG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB30N120FL2WG, NGTB30N120FL2WG Datasheet (Total Pages: 8, Size: 106.55 KB)
PDFNGTB30N120FL2WG Datasheet Cover
NGTB30N120FL2WG Datasheet Page 2 NGTB30N120FL2WG Datasheet Page 3 NGTB30N120FL2WG Datasheet Page 4 NGTB30N120FL2WG Datasheet Page 5 NGTB30N120FL2WG Datasheet Page 6 NGTB30N120FL2WG Datasheet Page 7 NGTB30N120FL2WG Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NGTB30N120FL2WG Datasheet
  • where to find NGTB30N120FL2WG
  • ON Semiconductor

  • ON Semiconductor NGTB30N120FL2WG
  • NGTB30N120FL2WG PDF Datasheet
  • NGTB30N120FL2WG Stock

  • NGTB30N120FL2WG Pinout
  • Datasheet NGTB30N120FL2WG
  • NGTB30N120FL2WG Supplier

  • ON Semiconductor Distributor
  • NGTB30N120FL2WG Price
  • NGTB30N120FL2WG Distributor

NGTB30N120FL2WG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 30A
Power - Max452W
Switching Energy2.6mJ (on), 700µJ (off)
Input TypeStandard
Gate Charge220nC
Td (on/off) @ 25°C98ns/210ns
Test Condition600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)240ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

The Products You May Be Interested In

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

34A

Current - Collector Pulsed (Icm)

88A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 10A

Power - Max

180W

Switching Energy

-

Input Type

Standard

Gate Charge

46nC

Td (on/off) @ 25°C

36ns/100ns

Test Condition

960V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr)

1.6µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263

IRGS8B60KPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

28A

Current - Collector Pulsed (Icm)

34A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 8A

Power - Max

167W

Switching Energy

160µJ (on), 160µJ (off)

Input Type

Standard

Gate Charge

29nC

Td (on/off) @ 25°C

23ns/140ns

Test Condition

400V, 8A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

IRG4BC30W-STRLP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

23A

Current - Collector Pulsed (Icm)

92A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Power - Max

100W

Switching Energy

130µJ (on), 130µJ (off)

Input Type

Standard

Gate Charge

51nC

Td (on/off) @ 25°C

25ns/99ns

Test Condition

480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

STGF30NC60S

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

22A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 20A

Power - Max

40W

Switching Energy

300µJ (on), 1.28mJ (off)

Input Type

Standard

Gate Charge

96nC

Td (on/off) @ 25°C

21.5ns/180ns

Test Condition

480V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220FP

APT36GA60B

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

65A

Current - Collector Pulsed (Icm)

109A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

290W

Switching Energy

307µJ (on), 254µJ (off)

Input Type

Standard

Gate Charge

102nC

Td (on/off) @ 25°C

16ns/122ns

Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

Recently Sold

SMLP34RGB2W3

SMLP34RGB2W3

Rohm Semiconductor

LED RGB DIFFUSED PICOLED SMD

JAN2N2222A

JAN2N2222A

Microsemi

TRANS NPN 50V 0.8A

NVMFS5A160PLZT1G

NVMFS5A160PLZT1G

ON Semiconductor

-60V7.7MOHMSINGLE

PIC18F6410-I/PT

PIC18F6410-I/PT

Microchip Technology

IC MCU 8BIT 16KB FLASH 64TQFP

EEE-FK1J220P

EEE-FK1J220P

Panasonic Electronic Components

CAP ALUM 22UF 20% 63V SMD

EVQ-PAC09K

EVQ-PAC09K

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.02A 15V

WSL20108L000FEA

WSL20108L000FEA

Vishay Dale

RES 0.008 OHM 1% 1/2W 2010

MF-R090

MF-R090

Bourns

PTC RESET FUSE 60V 900MA RADIAL

ESD3V3D5B-TP

ESD3V3D5B-TP

Micro Commercial Co

TVS DIODE 3.3V 12V SOD523

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W

MBR140SFT1G

MBR140SFT1G

ON Semiconductor

DIODE SCHOTTKY 40V 1A SOD123L

FMMT618TA

FMMT618TA

Diodes Incorporated

TRANS NPN 20V 2.5A SOT23-3