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NGTB20N120IHLWG

NGTB20N120IHLWG

For Reference Only

Part Number NGTB20N120IHLWG
PNEDA Part # NGTB20N120IHLWG
Description IGBT 1200V 40A 192W TO247-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,322
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB20N120IHLWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB20N120IHLWG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB20N120IHLWG, NGTB20N120IHLWG Datasheet (Total Pages: 9, Size: 169.67 KB)
PDFNGTB20N120IHLWG Datasheet Cover
NGTB20N120IHLWG Datasheet Page 2 NGTB20N120IHLWG Datasheet Page 3 NGTB20N120IHLWG Datasheet Page 4 NGTB20N120IHLWG Datasheet Page 5 NGTB20N120IHLWG Datasheet Page 6 NGTB20N120IHLWG Datasheet Page 7 NGTB20N120IHLWG Datasheet Page 8 NGTB20N120IHLWG Datasheet Page 9

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NGTB20N120IHLWG Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 20A
Power - Max192W
Switching Energy700µJ (off)
Input TypeStandard
Gate Charge200nC
Td (on/off) @ 25°C-/235ns
Test Condition600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Test Condition

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Operating Temperature

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Mounting Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

300V, 10A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Infineon Technologies

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

600V, 40A, 7.5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

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Package / Case

TO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

160µJ (on), 200µJ (off)

Input Type

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Gate Charge

50nC

Td (on/off) @ 25°C

17ns/78ns

Test Condition

480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

200W

Switching Energy

120µJ (on), 540µJ (off)

Input Type

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Gate Charge

180nC

Td (on/off) @ 25°C

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Test Condition

480V, 27A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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