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IRG7PK42UD1MPBF

IRG7PK42UD1MPBF

For Reference Only

Part Number IRG7PK42UD1MPBF
PNEDA Part # IRG7PK42UD1MPBF
Description IGBT 1200V DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,484
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7PK42UD1MPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7PK42UD1MPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG7PK42UD1MPBF Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

240A

Current - Collector Pulsed (Icm)

700A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 120A

Power - Max

1500W

Switching Energy

6.75mJ (on), 5.1mJ (off)

Input Type

Standard

Gate Charge

412nC

Td (on/off) @ 25°C

35ns/176ns

Test Condition

600V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXYK)

APT25GP120BG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

69A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 25A

Power - Max

417W

Switching Energy

500µJ (on), 438µJ (off)

Input Type

Standard

Gate Charge

110nC

Td (on/off) @ 25°C

12ns/70ns

Test Condition

600V, 25A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 35A

Power - Max

350W

Switching Energy

3.8mJ (off)

Input Type

Standard

Gate Charge

170nC

Td (on/off) @ 25°C

50ns/180ns

Test Condition

960V, 35A, 5Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

IHW20N65R5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 20A

Power - Max

150W

Switching Energy

300µJ (on), 70µJ (off)

Input Type

Standard

Gate Charge

97nC

Td (on/off) @ 25°C

24ns/250ns

Test Condition

400V, 10A, 20Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

STGP6M65DF2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

M

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 6A

Power - Max

88W

Switching Energy

40µJ (on), 136µJ (off)

Input Type

Standard

Gate Charge

21.2nC

Td (on/off) @ 25°C

12ns/86ns

Test Condition

400V, 6A, 22Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220

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