IRG8CH106K10F
For Reference Only
| Part Number | IRG8CH106K10F |
| PNEDA Part # | IRG8CH106K10F |
| Description | IGBT 1200V 110A DIE |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,218 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Dec 20 - Dec 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRG8CH106K10F Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRG8CH106K10F |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IRG8CH106K10F Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 110A |
| Power - Max | - |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 700nC |
| Td (on/off) @ 25°C | 80ns/380ns |
| Test Condition | 600V, 110A, 1Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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