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IRG8CH10K10F

IRG8CH10K10F

For Reference Only

Part Number IRG8CH10K10F
PNEDA Part # IRG8CH10K10F
Description IGBT 1200V 5A DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,778
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG8CH10K10F Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG8CH10K10F
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG8CH10K10F, IRG8CH10K10F Datasheet (Total Pages: 4, Size: 196.05 KB)
PDFIRG8CH10K10F Datasheet Cover
IRG8CH10K10F Datasheet Page 2 IRG8CH10K10F Datasheet Page 3 IRG8CH10K10F Datasheet Page 4

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IRG8CH10K10F Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2V @ 15V, 5A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C20ns/160ns
Test Condition600V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 4A, 47Ohm, 15V

Reverse Recovery Time (trr)

133ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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