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IRG7PH35UD1MPBF

IRG7PH35UD1MPBF

For Reference Only

Part Number IRG7PH35UD1MPBF
PNEDA Part # IRG7PH35UD1MPBF
Description IGBT 1200V 50A 179W TO247AD
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,488
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7PH35UD1MPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7PH35UD1MPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG7PH35UD1MPBF, IRG7PH35UD1MPBF Datasheet (Total Pages: 9, Size: 290.23 KB)
PDFIRG7PH35UD1MPBF Datasheet Cover
IRG7PH35UD1MPBF Datasheet Page 2 IRG7PH35UD1MPBF Datasheet Page 3 IRG7PH35UD1MPBF Datasheet Page 4 IRG7PH35UD1MPBF Datasheet Page 5 IRG7PH35UD1MPBF Datasheet Page 6 IRG7PH35UD1MPBF Datasheet Page 7 IRG7PH35UD1MPBF Datasheet Page 8 IRG7PH35UD1MPBF Datasheet Page 9

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IRG7PH35UD1MPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 20A
Power - Max179W
Switching Energy620µJ (off)
Input TypeStandard
Gate Charge130nC
Td (on/off) @ 25°C-/160ns
Test Condition600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

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IRG7PG35U-EPBF

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

55A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

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Supplier Device Package

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Microsemi

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Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 13A

Power - Max

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Switching Energy

115µJ (on), 165µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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