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IRG7CH81K10EF

IRG7CH81K10EF

For Reference Only

Part Number IRG7CH81K10EF
PNEDA Part # IRG7CH81K10EF
Description IGBT 1200V ULTRA FAST DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH81K10EF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH81K10EF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG7CH81K10EF Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

IXYS

Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

78A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 35A

Power - Max

325W

Switching Energy

3.8mJ (on), 4.1mJ (off)

Input Type

Standard

Gate Charge

106nC

Td (on/off) @ 25°C

-

Test Condition

600V, 35A, 27Ohm, 15V

Reverse Recovery Time (trr)

350ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (HB)

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

36A

Current - Collector Pulsed (Icm)

88A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

230W

Switching Energy

1.3mJ (on), 500µJ (off)

Input Type

Standard

Gate Charge

53nC

Td (on/off) @ 25°C

20ns/90ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

195ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

IXBT32N300

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

280A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 32A

Power - Max

400W

Switching Energy

-

Input Type

Standard

Gate Charge

142nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.5µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

IRG4BC30W-STRRP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

23A

Current - Collector Pulsed (Icm)

92A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Power - Max

100W

Switching Energy

130µJ (on), 130µJ (off)

Input Type

Standard

Gate Charge

51nC

Td (on/off) @ 25°C

25ns/99ns

Test Condition

480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

340A

Current - Collector Pulsed (Icm)

900A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 100A

Power - Max

-

Switching Energy

3mJ (on), 1.7mJ (off)

Input Type

Standard

Gate Charge

315nC

Td (on/off) @ 25°C

47ns/125ns

Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

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