Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRG7PH42UD1PBF

IRG7PH42UD1PBF

For Reference Only

Part Number IRG7PH42UD1PBF
PNEDA Part # IRG7PH42UD1PBF
Description IGBT 1200V 85A 313W TO247AC
Manufacturer Infineon Technologies
Unit Price
1 ---------- $87.4578
50 ---------- $83.3582
100 ---------- $79.2586
200 ---------- $75.1590
400 ---------- $71.7427
500 ---------- $68.3264
In Stock 2
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7PH42UD1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7PH42UD1PBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRG7PH42UD1PBF Datasheet
  • where to find IRG7PH42UD1PBF
  • Infineon Technologies

  • Infineon Technologies IRG7PH42UD1PBF
  • IRG7PH42UD1PBF PDF Datasheet
  • IRG7PH42UD1PBF Stock

  • IRG7PH42UD1PBF Pinout
  • Datasheet IRG7PH42UD1PBF
  • IRG7PH42UD1PBF Supplier

  • Infineon Technologies Distributor
  • IRG7PH42UD1PBF Price
  • IRG7PH42UD1PBF Distributor

IRG7PH42UD1PBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)85A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
Power - Max313W
Switching Energy1.21mJ (off)
Input TypeStandard
Gate Charge180nC
Td (on/off) @ 25°C-/270ns
Test Condition600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

The Products You May Be Interested In

IRGB4610DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 6A

Power - Max

77W

Switching Energy

56µJ (on), 122µJ (off)

Input Type

Standard

Gate Charge

13nC

Td (on/off) @ 25°C

27ns/75ns

Test Condition

400V, 6A, 47Ohm, 15V

Reverse Recovery Time (trr)

74ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

RGT50NS65DGC9

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

48A

Current - Collector Pulsed (Icm)

75A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 25A

Power - Max

194W

Switching Energy

-

Input Type

Standard

Gate Charge

49nC

Td (on/off) @ 25°C

27ns/88ns

Test Condition

400V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

58ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

TO-262

FGH75T65SQDNL4

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

200A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Power - Max

375W

Switching Energy

1.25mJ (on), 1.26mJ (off)

Input Type

Standard

Gate Charge

152nC

Td (on/off) @ 25°C

44ns/208ns

Test Condition

400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr)

134ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-4

Supplier Device Package

TO-247-4L

APT45GP120BG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

170A

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 45A

Power - Max

625W

Switching Energy

900µJ (on), 904µJ (off)

Input Type

Standard

Gate Charge

185nC

Td (on/off) @ 25°C

18ns/102ns

Test Condition

600V, 45A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

RJH60D0DPM-00#T1

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 22A

Power - Max

40W

Switching Energy

230µJ (on), 290µJ (off)

Input Type

Standard

Gate Charge

46nC

Td (on/off) @ 25°C

40ns/80ns

Test Condition

300V, 22A, 5Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3PFM, SC-93-3

Supplier Device Package

TO-3PFM

Recently Sold

HSMS-2862-TR1G

HSMS-2862-TR1G

Broadcom

RF DIODE SCHOTTKY 4V SOT23-3

UUX1E470MCL1GS

UUX1E470MCL1GS

Nichicon

CAP ALUM 47UF 20% 25V SMD

EDF1DS-E3/77

EDF1DS-E3/77

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 200V 1A DFS

ISL62882CHRTZ

ISL62882CHRTZ

Renesas Electronics America Inc.

IC REG CONV INTEL 1OUT 40TQFN

1N5254B

1N5254B

ON Semiconductor

DIODE ZENER 27V 500MW DO35

B560C-13-F

B560C-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

ZTB800J

ZTB800J

ECS

CER RES 800.0000KHZ T/H

TZB4R500AB10R00

TZB4R500AB10R00

Murata

CAP TRIMMER 7-50PF 50V SMD

WSL2512R0500FEA

WSL2512R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 2512

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A

SHT11

SHT11

Sensirion AG

SENSOR HUMID/TEMP 5V DTL 3% SMD

CDBHD1100L-G

CDBHD1100L-G

Comchip Technology

BRIDGE RECT 1P 100V 1A MINI-DIP