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IRG7CH30K10EF

IRG7CH30K10EF

For Reference Only

Part Number IRG7CH30K10EF
PNEDA Part # IRG7CH30K10EF
Description IGBT CHIP WAFER
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,796
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 15 - Apr 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH30K10EF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH30K10EF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG7CH30K10EF, IRG7CH30K10EF Datasheet (Total Pages: 4, Size: 190.99 KB)
PDFIRG7CH30K10EF Datasheet Cover
IRG7CH30K10EF Datasheet Page 2 IRG7CH30K10EF Datasheet Page 3 IRG7CH30K10EF Datasheet Page 4

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IRG7CH30K10EF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)10A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.56V @ 15V, 10A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge4.8nC
Td (on/off) @ 25°C10ns/90ns
Test Condition600V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Test Condition

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Operating Temperature

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

6.75mJ (on), 5.1mJ (off)

Input Type

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Gate Charge

412nC

Td (on/off) @ 25°C

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Test Condition

600V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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