IRG7CH50UEF
For Reference Only
| Part Number | IRG7CH50UEF |
| PNEDA Part # | IRG7CH50UEF |
| Description | IGBT 1200V ULTRA FAST DIE |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,544 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IRG7CH50UEF Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IRG7CH50UEF |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRG7CH50UEF Datasheet
- where to find IRG7CH50UEF
- Infineon Technologies
- Infineon Technologies IRG7CH50UEF
- IRG7CH50UEF PDF Datasheet
- IRG7CH50UEF Stock
- IRG7CH50UEF Pinout
- Datasheet IRG7CH50UEF
- IRG7CH50UEF Supplier
- Infineon Technologies Distributor
- IRG7CH50UEF Price
- IRG7CH50UEF Distributor
IRG7CH50UEF Specifications
| Manufacturer | Infineon Technologies |
| Series | * |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | - |
| Power - Max | - |
| Switching Energy | - |
| Input Type | - |
| Gate Charge | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A Power - Max - Switching Energy - Input Type Standard Gate Charge 540nC Td (on/off) @ 25°C 90ns/580ns Test Condition 600V, 75A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 2500V Current - Collector (Ic) (Max) 116A Current - Collector Pulsed (Icm) 750A Vce(on) (Max) @ Vge, Ic 3V @ 15V, 64A Power - Max 500W Switching Energy - Input Type Standard Gate Charge 400nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 160ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case ISOPLUSi5-Pak™ Supplier Device Package ISOPLUSi5-Pak™ |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 90A Current - Collector Pulsed (Icm) 192A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 48A Power - Max 300W Switching Energy 1.7mJ (on), 1mJ (off) Input Type Standard Gate Charge 150nC Td (on/off) @ 25°C 70ns/140ns Test Condition 400V, 48A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD |
Manufacturer Infineon Technologies Series TrenchStop® IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 40A Power - Max 429W Switching Energy 2.02mJ (off) Input Type Standard Gate Charge 335nC Td (on/off) @ 25°C -/336ns Test Condition 600V, 40A, 7.5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PG-TO247-3 |
Manufacturer IXYS Series BIMOSFET™ IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 3000V Current - Collector (Ic) (Max) 38A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 14A Power - Max 200W Switching Energy - Input Type Standard Gate Charge 62nC Td (on/off) @ 25°C 40ns/166ns Test Condition 960V, 14A, 20Ohm, 15V Reverse Recovery Time (trr) 1.4µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263 |
