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IRG7CH11K10EF

IRG7CH11K10EF

For Reference Only

Part Number IRG7CH11K10EF
PNEDA Part # IRG7CH11K10EF
Description IGBT 1200V DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,078
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH11K10EF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH11K10EF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG7CH11K10EF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

380A

Current - Collector Pulsed (Icm)

900A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 100A

Power - Max

1630W

Switching Energy

2.85mJ (on), 2.9mJ (off)

Input Type

Standard

Gate Charge

315nC

Td (on/off) @ 25°C

48ns/160ns

Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Manufacturer

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Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 40A

Power - Max

260W

Switching Energy

2.6mJ (on), 1.6mJ (off)

Input Type

Standard

Gate Charge

415nC

Td (on/off) @ 25°C

130ns/385ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

200ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

IXGT30N60B

IXYS

Manufacturer

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Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 30A

Power - Max

200W

Switching Energy

1.3mJ (off)

Input Type

Standard

Gate Charge

125nC

Td (on/off) @ 25°C

25ns/130ns

Test Condition

480V, 30A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

38A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 14A

Power - Max

200W

Switching Energy

-

Input Type

Standard

Gate Charge

62nC

Td (on/off) @ 25°C

40ns/166ns

Test Condition

960V, 14A, 20Ohm, 15V

Reverse Recovery Time (trr)

1.4µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263

IRG4BC30KD-SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

28A

Current - Collector Pulsed (Icm)

56A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Power - Max

100W

Switching Energy

600µJ (on), 580µJ (off)

Input Type

Standard

Gate Charge

67nC

Td (on/off) @ 25°C

60ns/160ns

Test Condition

480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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