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APT45GR65B2DU30

APT45GR65B2DU30

For Reference Only

Part Number APT45GR65B2DU30
PNEDA Part # APT45GR65B2DU30
Description INSULATED GATE BIPOLAR TRANSISTO
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 5,742
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 23 - Apr 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT45GR65B2DU30 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT45GR65B2DU30
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT45GR65B2DU30 Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)118A
Current - Collector Pulsed (Icm)224A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 45A
Power - Max543W
Switching Energy-
Input TypeStandard
Gate Charge203nC
Td (on/off) @ 25°C15ns/100ns
Test Condition433V, 45A, 4.3Ohm, 15V
Reverse Recovery Time (trr)80ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageT-MAX™ [B2]

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Vce(on) (Max) @ Vge, Ic

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Operating Temperature

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Test Condition

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Operating Temperature

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Current - Collector (Ic) (Max)

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Mounting Type

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Mounting Type

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Package / Case

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Supplier Device Package

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