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APT44GA60BD30C

APT44GA60BD30C

For Reference Only

Part Number APT44GA60BD30C
PNEDA Part # APT44GA60BD30C
Description IGBT 600V 78A 337W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 7,236
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT44GA60BD30C Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT44GA60BD30C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
APT44GA60BD30C, APT44GA60BD30C Datasheet (Total Pages: 9, Size: 226.49 KB)
PDFAPT44GA60BD30C Datasheet Cover
APT44GA60BD30C Datasheet Page 2 APT44GA60BD30C Datasheet Page 3 APT44GA60BD30C Datasheet Page 4 APT44GA60BD30C Datasheet Page 5 APT44GA60BD30C Datasheet Page 6 APT44GA60BD30C Datasheet Page 7 APT44GA60BD30C Datasheet Page 8 APT44GA60BD30C Datasheet Page 9

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APT44GA60BD30C Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 8™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)78A
Current - Collector Pulsed (Icm)130A
Vce(on) (Max) @ Vge, Ic1.6V @ 15V, 26A
Power - Max337W
Switching Energy409µJ (on), 450µJ (off)
Input TypeStandard
Gate Charge128nC
Td (on/off) @ 25°C16ns/102ns
Test Condition400V, 26A, 4.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 35A

Power - Max

125W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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ON Semiconductor

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

35nC

Td (on/off) @ 25°C

16ns/37ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

34ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247

Manufacturer

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Series

HiPerFAST™, Lightspeed™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

48A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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-55°C ~ 150°C (TJ)

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TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

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IKD04N60RFATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 4A

Power - Max

75W

Switching Energy

60µJ (on), 50µJ (off)

Input Type

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Gate Charge

27nC

Td (on/off) @ 25°C

12ns/116ns

Test Condition

400V, 4A, 43Ohm, 15V

Reverse Recovery Time (trr)

34ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

PG-TO252-3

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Power - Max

480W

Switching Energy

380µJ (off)

Input Type

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Gate Charge

138nC

Td (on/off) @ 25°C

18ns/115ns

Test Condition

480V, 40A, 2Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

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