Transistors

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Records 64,903

Page 1912/2164

Part Number	Description	In Stock
TPC8021-H(TE12LQ,M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock3,546
TPC8022-H(TE12LQ,M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 7.5A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock3,492
TPC8026(TE12L,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8-SOIC Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.6mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock4,572
TPC8031-H(TE12LQM) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock5,508
TPC8032-H(TE12LQM) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 2846pF @ 10V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock6,912
TPC8033-H(TE12LQM) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 5.3mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 3713pF @ 10V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock8,766
TPC8035-H(TE12L,QM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 18A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock4,464
TPC8036-H(TE12L,QM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 18A 8-SOIC Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock3,204
TPC8038-H(TE12L,Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 11.4mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock5,922
TPC8042(TE12L,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 18A 8-SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock5,382
TPC8048-H(TE12L,Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 16A 8-SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7540pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock14,706
TPC8051-H(TE12L,Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 13A 8-SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.7mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7540pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock4,986
TPC8062-H,LQ(CM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 18A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.3V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock4,158
TPC8065-H,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,892
TPC8066-H,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,276
TPC8067-H,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock5,004
TPC8092,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock5,508
TPC8109(TE12L) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 10A 8-SOP Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock4,014
TPC8110(TE12L,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 8A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock6,354
TPC8111(TE12L,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 11A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5710pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock3,006
TPC8113(TE12L,Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 11A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock3,258
TPC8115(TE12L,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 10A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock4,518
TPC8125,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 10A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 2580pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock7,596
TPC8126,LQ(CM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 11A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock5,310
TPC8129,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,352
TPC8132,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 7A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,448
TPC8133,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 9A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,856
TPC8134,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 5A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock4,716
TPC8A02-H(TE12L,Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 16A SOP8 2-6J1B Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock4,140
TPC8A05-H(TE12L,QM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10A 8SOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	In Stock4,122

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