Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1910/2164

Part Number	Description	In Stock
TN5325K1-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V SOT23-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,426
TN5325N3-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 0.215A TO92-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 215mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V FET Feature: - Power Dissipation (Max): 740mW (Ta) Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock15,300
TN5325N3-G-P002 Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 0.215A TO92-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 215mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V FET Feature: - Power Dissipation (Max): 740mW (Ta) Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock4,590
TN5325N8-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 0.316A SOT89-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 316mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	In Stock2,844
TN5335K1-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V 0.11A SOT23-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 110mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,898
TN5335N8-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V 0.23A SOT89-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	In Stock21,540
TP0101K-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.58A SOT23-3 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 650mOhm @ 580mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock8,010
TP0202K-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 385MA SOT23-3 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 385mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,300
TP0202K-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 385MA SOT23-3 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 385mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,340
TP0604N3-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 430MA TO92-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 430mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock19,200
TP0606N3-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 320MA TO92-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock20,892
TP0606N3-G-P002 Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 320MA TO92-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock2,808
TP0606N3-G-P003 Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 320MA TO92-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock4,770
TP0610KL-TR1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 270MA TO92-3 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 15V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-226AA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock4,086
TP0610K-T1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 185MA SOT23 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,886
TP0610K-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 185MA SOT23-3 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock643,050
TP0610K-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 185MA TO-236 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock666,246
TP0610T-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.12A SOT23-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock24,180
TP0620N3-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.175A TO92-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock16,140
TP2104K1-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 0.16A SOT23-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,844
TP2104N3-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 0.175A TO92-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V FET Feature: - Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock15,024
TP2104N3-G-P003 Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 0.175A TO92-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V FET Feature: - Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock6,570
TP2424N8-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 240V 0.316A SOT89-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 316mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	In Stock5,058
TP2435N8-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 350V 0.231A SOT89-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 231mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	In Stock3,276
TP2502N8-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.63A SOT89-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	In Stock4,698
TP2510N8-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.48A SOT89-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 480mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	In Stock3,472
TP2520N8-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.26A SOT89-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	In Stock5,814
TP2522N8-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 220V 0.26A SOT89-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 220V Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	In Stock3,472
TP2535N3-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 350V 0.086A TO92-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V FET Feature: - Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock21,408
TP2540N3-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 400V 0.086A TO92-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V FET Feature: - Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock8,292

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