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TPC8113(TE12L,Q)

TPC8113(TE12L,Q)

For Reference Only

Part Number TPC8113(TE12L,Q)
PNEDA Part # TPC8113-TE12L-Q
Description MOSFET P-CH 30V 11A SOP8 2-6J1B
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 3,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPC8113(TE12L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPC8113(TE12L,Q)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPC8113(TE12L, TPC8113(TE12L Datasheet (Total Pages: 7, Size: 214.94 KB)
PDFTPC8113(TE12L Datasheet Cover
TPC8113(TE12L Datasheet Page 2 TPC8113(TE12L Datasheet Page 3 TPC8113(TE12L Datasheet Page 4 TPC8113(TE12L Datasheet Page 5 TPC8113(TE12L Datasheet Page 6 TPC8113(TE12L Datasheet Page 7

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TPC8113(TE12L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs107nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP (5.5x6.0)
Package / Case8-SOIC (0.173", 4.40mm Width)

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