Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1914/2164

Part Number	Description	In Stock
TPCA8102(TE12L,Q,M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 40A SOP-8 ADV Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	In Stock4,446
TPCA8103(TE12L,Q,M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 40A SOP-8 ADV Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 184nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7880pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	In Stock2,628
TPCA8105(TE12L,Q,M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 6A SOP-8 ADV Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	In Stock8,712
TPCA8120,LQ(CM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 45A 8SOP-ADV Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 7420pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	In Stock6,624
TPCA8128,LQ(CM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 34A 8SOP-ADV Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 34A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	In Stock2,358
TPCA8A01-H(TE12L,Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 36A SOP8 ADV Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	In Stock7,056
TPCA8A02-H(TE12LQM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 34A 8SOP ADV Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 34A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	In Stock3,454
TPCA8A04-H(TE12L,Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 44A 8SOP ADV Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 44A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 10V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	In Stock3,114
TPCC8001-H(TE12LQM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A 8TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock3,330
TPCC8002-H(TE12L,Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A 8TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock5,580
TPCC8002-H(TE12LQM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A 8TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock2,100
TPCC8003-H(TE12LQM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16.9mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 22W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock3,852
TPCC8005-H(TE12LQM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 26A 8TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock8,676
TPCC8006-H(TE12LQM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A 8TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 27W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock4,806
TPCC8008(TE12L,QM) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 25A 8TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock16,500
TPCC8009,LQ(O Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 24A 8TSON-ADV Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock5,760
TPCC8065-H,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8TSON-ADV Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.4mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 18W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock3,490
TPCC8066-H,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8TSON-ADV Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 17W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock4,698
TPCC8067-H,LQ(S Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9A 8TSON-ADV Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 15W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock7,398
TPCC8093,L1Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X35 PB-F POWER MOSFET TRANSISTOR Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 10V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 30W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock8,244
TPCC8103(TE12L,QM) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 18A 8TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 27W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock6,612
TPCC8A01-H(TE12LQM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 21A SBD 8TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSV-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock8,154
TPCF8101(TE85L,F,M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 6A VS-8 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-8 (2.9x1.5) Package / Case: 8-SMD, Flat Lead	In Stock2,772
TPCF8102(TE85L,F,M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6A VS8 2-3U1A Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-8 (2.9x1.5) Package / Case: 8-SMD, Flat Lead	In Stock4,932
TPCF8104(TE85L,F,M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 6A VS-8 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-8 (2.9x1.5) Package / Case: 8-SMD, Flat Lead	In Stock3,096
TPCF8107,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 6A VS-8 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-8 (2.9x1.5) Package / Case: 8-SMD, Flat Lead	In Stock5,004
TPCF8A01(TE85L) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3A VS-8 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 330mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-8 (2.9x1.5) Package / Case: 8-SMD, Flat Lead	In Stock5,976
TPCF8B01(TE85L,F,M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.7A VS-8 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 330mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-8 (2.9x1.5) Package / Case: 8-SMD, Flat Lead	In Stock3,598
TPCP8001-H(TE85LFM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.2A PS-8 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PS-8 (2.9x2.4) Package / Case: 8-SMD, Flat Lead	In Stock2,970
TPCP8003-H(TE85L,F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 2.2A PS-8 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V FET Feature: - Power Dissipation (Max): 840mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PS-8 (2.9x2.4) Package / Case: 8-SMD, Flat Lead	In Stock6,174

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