Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TPC8129,LQ(S

TPC8129,LQ(S

For Reference Only

Part Number TPC8129,LQ(S
PNEDA Part # TPC8129-LQ-S
Description MOSFET P-CH 30V 9A 8SOP
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPC8129 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPC8129,LQ(S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TPC8129,LQ(S Datasheet
  • where to find TPC8129,LQ(S
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TPC8129,LQ(S
  • TPC8129,LQ(S PDF Datasheet
  • TPC8129,LQ(S Stock

  • TPC8129,LQ(S Pinout
  • Datasheet TPC8129,LQ(S
  • TPC8129,LQ(S Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TPC8129,LQ(S Price
  • TPC8129,LQ(S Distributor

TPC8129 Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVI
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs22mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds1650pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

IPL60R199CPAUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

16.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

199mOhm @ 9.9A, 10V

Vgs(th) (Max) @ Id

3.5V @ 660µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1520pF @ 100V

FET Feature

-

Power Dissipation (Max)

139W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-VSON-4

Package / Case

4-PowerTSFN

BSH202,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

520mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

900mOhm @ 280mA, 10V

Vgs(th) (Max) @ Id

1.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

80pF @ 24V

FET Feature

-

Power Dissipation (Max)

417mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

FDMA7670

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1360pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-MicroFET (2x2)

Package / Case

6-VDFN Exposed Pad

SI1404BDH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.9A (Ta), 2.37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

238mOhm @ 1.9A, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.7nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.32W (Ta), 2.28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363

IRF7469

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

ADG5419BRMZ

ADG5419BRMZ

Analog Devices

IC SWITCH SINGLE SPDT 8MSOP

7447709220

7447709220

Wurth Electronics

FIXED IND 22UH 5.3A 28 MOHM SMD

CM1213-08MR

CM1213-08MR

ON Semiconductor

TVS DIODE 3.3V 8.8V 10MSOP

M4A5-32/32-10JNC

M4A5-32/32-10JNC

Lattice Semiconductor Corporation

IC CPLD 32MC 10NS 44PLCC

BC81725MTF

BC81725MTF

ON Semiconductor

TRANS NPN 45V 0.8A SOT-23

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

NC7SZ00P5X

NC7SZ00P5X

ON Semiconductor

IC GATE NAND 1CH 2-INP SC70-5

C8051F340-GQ

C8051F340-GQ

Silicon Labs

IC MCU 8BIT 64KB FLASH 48TQFP

LT1963AEFE-3.3#TRPBF

LT1963AEFE-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A 16TSSOP

74HC14DR2G

74HC14DR2G

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

PLA10AN3630R3D2B

PLA10AN3630R3D2B

Murata

COMMON MODE CHOKE 300MA 2LN TH