TPC8031-H(TE12LQM)
![TPC8031-H(TE12LQM)](http://pneda.ltd/static/products/images_mk/400/TPC8031-H-TE12LQM.webp)
For Reference Only
Part Number | TPC8031-H(TE12LQM) |
PNEDA Part # | TPC8031-H-TE12LQM |
Description | MOSFET N-CH 30V 11A SOP8 2-6J1B |
Manufacturer | Toshiba Semiconductor and Storage |
Unit Price | Request a Quote |
In Stock | 5,508 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
TPC8031-H(TE12LQM) Resources
Brand | Toshiba Semiconductor and Storage |
ECAD Module |
![]() |
Mfr. Part Number | TPC8031-H(TE12LQM) |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
![TT](/res/v2/images/help/p-tt.gif )
![Unionpay](/res/v2/images/help/p-unionpay.gif )
![paypal](/res/v2/images/help/p-paypal.gif )
![paypalwtcreditcard](/res/v2/images/help/p-paypalwtcreditcard.gif )
![alipay](/res/v2/images/help/p-alipay.gif )
![wu](/res/v2/images/help/p-wu.gif )
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
![TNT](/res/v2/images/help/s-tnt.gif )
![UPS](/res/v2/images/help/s-ups.gif )
![Fedex](/res/v2/images/help/s-fedex.gif )
![EMS](/res/v2/images/help/s-ems.gif )
![DHL](/res/v2/images/help/s-dhl.gif )
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TPC8031-H(TE12LQM) Datasheet
- where to find TPC8031-H(TE12LQM)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TPC8031-H(TE12LQM)
- TPC8031-H(TE12LQM) PDF Datasheet
- TPC8031-H(TE12LQM) Stock
- TPC8031-H(TE12LQM) Pinout
- Datasheet TPC8031-H(TE12LQM)
- TPC8031-H(TE12LQM) Supplier
- Toshiba Semiconductor and Storage Distributor
- TPC8031-H(TE12LQM) Price
- TPC8031-H(TE12LQM) Distributor
TPC8031-H(TE12LQM) Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 13.3mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | 2150pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP (5.5x6.0) |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |
The Products You May Be Interested In
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 66A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V FET Feature - Power Dissipation (Max) 170W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 110mOhm @ 500mA, 5V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.45nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 52pF @ 20V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13mOhm @ 76A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V FET Feature - Power Dissipation (Max) 188W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |