TPC8A05-H(TE12L,QM
For Reference Only
| Part Number | TPC8A05-H(TE12L,QM |
| PNEDA Part # | TPC8A05-H-TE12L-QM |
| Description | MOSFET N-CH 30V 10A 8SOP |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 4,122 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 23 - Apr 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TPC8A05-H(TE12L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | TPC8A05-H(TE12L,QM |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TPC8A05-H(TE12L,QM Datasheet
- where to find TPC8A05-H(TE12L,QM
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TPC8A05-H(TE12L,QM
- TPC8A05-H(TE12L,QM PDF Datasheet
- TPC8A05-H(TE12L,QM Stock
- TPC8A05-H(TE12L,QM Pinout
- Datasheet TPC8A05-H(TE12L,QM
- TPC8A05-H(TE12L,QM Supplier
- Toshiba Semiconductor and Storage Distributor
- TPC8A05-H(TE12L,QM Price
- TPC8A05-H(TE12L,QM Distributor
TPC8A05-H(TE12L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSV-H |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 13.3mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 60A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 16mOhm @ 30A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 3075pF @ 25V FET Feature - Power Dissipation (Max) 2.4W (Ta), 150W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 27A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 69W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer IXYS Series PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 60mOhm @ 50A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2720pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 210nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V FET Feature - Power Dissipation (Max) 285W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series SuperMESH3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 235pF @ 50V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
