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IPP100N06S3L-04

IPP100N06S3L-04

For Reference Only

Part Number IPP100N06S3L-04
PNEDA Part # IPP100N06S3L-04
Description MOSFET N-CH 55V 100A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP100N06S3L-04 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP100N06S3L-04
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP100N06S3L-04, IPP100N06S3L-04 Datasheet (Total Pages: 9, Size: 194.84 KB)
PDFIPB100N06S3L-04 Datasheet Cover
IPB100N06S3L-04 Datasheet Page 2 IPB100N06S3L-04 Datasheet Page 3 IPB100N06S3L-04 Datasheet Page 4 IPB100N06S3L-04 Datasheet Page 5 IPB100N06S3L-04 Datasheet Page 6 IPB100N06S3L-04 Datasheet Page 7 IPB100N06S3L-04 Datasheet Page 8 IPB100N06S3L-04 Datasheet Page 9

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IPP100N06S3L-04 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs362nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds17270pF @ 25V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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