Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPP100N04S204AKSA1

IPP100N04S204AKSA1

For Reference Only

Part Number IPP100N04S204AKSA1
PNEDA Part # IPP100N04S204AKSA1
Description MOSFET N-CH 40V 100A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,970
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP100N04S204AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP100N04S204AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP100N04S204AKSA1, IPP100N04S204AKSA1 Datasheet (Total Pages: 8, Size: 153.52 KB)
PDFIPP100N04S204AKSA2 Datasheet Cover
IPP100N04S204AKSA2 Datasheet Page 2 IPP100N04S204AKSA2 Datasheet Page 3 IPP100N04S204AKSA2 Datasheet Page 4 IPP100N04S204AKSA2 Datasheet Page 5 IPP100N04S204AKSA2 Datasheet Page 6 IPP100N04S204AKSA2 Datasheet Page 7 IPP100N04S204AKSA2 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPP100N04S204AKSA1 Datasheet
  • where to find IPP100N04S204AKSA1
  • Infineon Technologies

  • Infineon Technologies IPP100N04S204AKSA1
  • IPP100N04S204AKSA1 PDF Datasheet
  • IPP100N04S204AKSA1 Stock

  • IPP100N04S204AKSA1 Pinout
  • Datasheet IPP100N04S204AKSA1
  • IPP100N04S204AKSA1 Supplier

  • Infineon Technologies Distributor
  • IPP100N04S204AKSA1 Price
  • IPP100N04S204AKSA1 Distributor

IPP100N04S204AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs172nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5300pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

The Products You May Be Interested In

IRF6785MTR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 57W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MZ

Package / Case

DirectFET™ Isometric MZ

IXTQ82N25P

IXYS

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

82A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

35mOhm @ 41A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

142nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

SUM75N15-18P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4180pF @ 75V

FET Feature

-

Power Dissipation (Max)

3.12W (Ta), 312.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPL65R165CFDAUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

21.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2340pF @ 100V

FET Feature

-

Power Dissipation (Max)

195W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-VSON-4

Package / Case

4-PowerTSFN

IXFP8N65X2

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

790pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

EVQ-PAC09K

EVQ-PAC09K

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.02A 15V

MPQ8633BGLE-Z

MPQ8633BGLE-Z

Monolithic Power Systems Inc.

IC REG BUCK ADJUSTABLE 20A 21QFN

LPC2388FBD144,551

LPC2388FBD144,551

NXP

IC MCU 32BIT 512KB FLASH 144LQFP

FXLP34P5X

FXLP34P5X

ON Semiconductor

IC TRNSLTR UNIDIRECTIONAL SC70-5

PIC18F6410-I/PT

PIC18F6410-I/PT

Microchip Technology

IC MCU 8BIT 16KB FLASH 64TQFP

ZHCS400TA

ZHCS400TA

Diodes Incorporated

DIODE SCHOTTKY 40V 400MA SOD323

MAX3051ESA+T

MAX3051ESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SO

NVMFS5A160PLZT1G

NVMFS5A160PLZT1G

ON Semiconductor

-60V7.7MOHMSINGLE

W25Q64JVSFIQ

W25Q64JVSFIQ

Winbond Electronics

IC FLASH 64M SPI 133MHZ 16SOIC

3224W-1-203E

3224W-1-203E

Bourns

TRIMMER 20K OHM 0.25W J LEAD TOP

B360B-13-F

B360B-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMB

CY37064P44-125JXC

CY37064P44-125JXC

Cypress Semiconductor

IC CPLD 64MC 10NS 44PLCC